Faculty Profiles - MASUDA Atsushi

MISC - MASUDA Atsushi

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Lamination-interface-dependent deacetylation of ethylene vinyl acetate encapsulant in crystalline Si photovoltaic modules evaluated by positron annihilation lifetime spectroscopy

Hideaki Hagihara, Hiroaki Sato, Yukiko Hara, Sachiko Jonai, Atsushi Masuda

Japanese Journal of Applied Physics 57 2018.8

Potential-induced degradation of photovoltaic modules composed of interdigitated back contact solar cells observed in an actual photovoltaic system

Tetsuyuki Ishii, Ritsuko Sato, Sungwoo Choi, Yasuo Chiba, Atsushi Masuda

Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition 1414 - 1417 2017.11

Degradation of encapsulants for photovoltaic modules made of ethylene vinyl acetate studied by positron annihilation lifetime spectroscopy

Hideaki Hagihara, Masao Kunioka, Hiroyuki Suda, Yukiko Hara, Atsushi Masuda

JAPANESE JOURNAL OF APPLIED PHYSICS 55 ( 10 ) 2016.10

Annual degradation rates of bulk crystalline silicon PV modules estimated from indoor and outdoor measurements

Tetsuyuki Ishii, Atsushi Masuda, Yoshihiro Hishikawa

Proceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition 2571 - 2574 2015.11

CuIn1-xGaxSe2太陽電池モジュールにおけるPID現象

山口世力, 山口世力, 原浩二郎, 小牧弘典, 上川由紀子, 柴田肇, 仁木栄, 川上雄士, 増田淳

応用物理学会春季学術講演会講演予稿集(CD-ROM) 61st 2014

CS-3-2 Recent Situation and Future Prospects of Photovoltaic Markets and Technologies

Masuda Atsushi

Proceedings of the Society Conference of IEICE 2009 ( 2 ) "S - 3"-"S-4" 2009.9

Flexible thin-film solar cells

MASUDA Atsushi

77 ( 10 ) 1213 - 1219 2008.10

Novel type Solar Cells

MASUDA Atsushi

Ceramics Japan 43 ( 1 ) 62 - 67 2008.1

Mass-spectrometric studies of catalytic chemical vapor deposition processes of organic silicon compounds containing nitrogen

T Morimoto, SG Ansari, K Yoneyama, T Nakajima, A Masuda, H Matsumura, M Nakamura, H Umemoto

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 2A ) 961 - 966 2006.2

Low-temperature deposition of silicon nitride films by a cat-CVD technique - Gas-phase diagnoses and evaluation of film properties -

Hironobu Umemoto, Atsushi Masuda, Hideki Matsumura, Toshiharu Minamikawa, Akira Hhya, Masahiro Takano, Yasuto Yonezawa, Toshikazu Niki, Susumu Muroi, Shigehira Minami

Zairyo/Journal of the Society of Materials Science, Japan 55 ( 2 ) 142 - 147 2006.2

Development of Catalytic Chemical Vapor Deposition Systems for Flexible Organic Light-Emitting Diode Displays

部家彰, 高野昌宏, 米沢保人, 南川俊治, 仁木敏一, 室井進, 南茂平, 大薗哲郎, 増田淳, 梅本宏信, 松村英樹

石川県工業試験場研究報告 ( 54 ) 17 - 22 2005.12

Technique for the production, preservation, and transportation of H atoms in metal chambers for processings

SG Ansari, H Umemoto, T Morimoto, K Yoneyama, A Masuda, H Matsumura, M Ikemoto, K Ishibashi

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 23 ( 6 ) 1728 - 1731 2005.11

CS-5-7 Properties and device applications of SiNx films prepared by Cat-CVD

Masuda Atsushi, Umemoto Hironobu, Matsumura Hideki

Proceedings of the Society Conference of IEICE 2005 ( 2 ) "S - 13"-"S-14" 2005.9

ELと光学技術 Cat‐CVD法による水蒸気バリア薄膜の低温形成

南川俊治, 部家彰, 高野昌宏, 米沢保人, 仁木敏一, 南茂平, 増田淳, 梅本宏信, 松村英樹

光技術コンタクト 43 ( 6 ) 328 - 333 2005.6

Preparation of low-stress SiNx films by catalytic chemical vapor deposition at low temperatures

M Takano, T Niki, A Heya, T Osono, Y Yonezawa, T Minamikawa, S Muroi, S Minami, A Masuda, H Umemoto, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 6A ) 4098 - 4102 2005.6

Improvement of deposition rate by sandblasting of tungsten wire in catalytic chemical vapor deposition

A Heya, T Niki, M Takano, Y Doguchi, Y Yonezawa, T Minamikawa, S Muroi, S Minami, A Izumi, A Masuda, H Umemoto, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 4A ) 1943 - 1944 2005.4

Moisture-resistive properties of SiNx films prepared by catalytic chemical vapor deposition below 100 degrees C for flexible organic light-emitting diode displays

A Heya, T Niki, M Takano, Y Yonezawa, T Minamikawa, S Muroi, S Minami, T Ikari, A Izumi, A Masuda, H Umemoto, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 4A ) 1923 - 1927 2005.4

Cat-CVD法の包装用ガスバリアフィルム製造工程への適用 (特集マーケット創出の成否を決する次世代パッケージング) -- (未来のマーケットを支える技術と商品開発)

増田淳, 梅本宏信, 松村英樹

パックピア 49 ( 1 ) 34 - 39 2005.1

有機ELディスプレイ用水蒸気バリア膜の形成 -低温触媒CVD装置の開発-

電子情報通信学会技術研究報告 105 ( 434 ) 7 - 12 2005

Enlargement of ELA poly-Si film : Relationship between Crystal Growth and Hydrogen

KAWAMOTO N., MASUDA A., MATSUO N., SERI Y., MATSUMURA H., HAMADA H., MIYOSHI T.

Technical report of IEICE. SDM 104 ( 510 ) 47 - 51 2004.12

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

The role of the hydrogen which is introduced in the melt-Si during the excimer laser annealing (ELA) is examined from a viewpoint of grain enlargement. We successfully prepared the a-Si/SiN/glass structure by utilizing the catalytic chemical vapor deposition (Cat-CVD) method for SiN film, where hydrogen concentration of SiN film is controlled. The grain size increases as decreasing thehydrogen concentration, and it partially exceeds 2 μm by fixing the hydrogen concentration in the SiN film to 2 3 at % The relationshipbetween the defects of the grain boundary and hydrogen is also referred.

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Resist-removal technique without plasma using hydrogen atoms generated on heated catalyzer

MASUDA Atsushi, HASHIMOTO Kouhei, TAKAO Kazuhisa, IHSIBASHI Tomoatsu, MATSUMURA Hideki

IEICE technical report. Component parts and materials 104 ( 425 ) 39 - 43 2004.11

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Resist-removal technique without plasma using high-density hydrogen atoms generated on heated catalyzer is introduced. Both no plasma damage and no oxidation for the substrate under the resist are advantages of this process in comparison with the conventional oxygen plasma ashing. However, slow removal rate had been a problem to be solved. In this study, hydrogen flow rate, hydrogen pressure, catalyzer temperature, wafer-stage temperature and distance between catalyzer and wafer were widely changed and resist-removal rate faster than 1 μm/min was realized in the optimized condition. This removal rate should be applicable level in industry. Concentration of tungsten on wafer, possibly evaporated from the catalyzer, was estimated to be the first half of 10^<10> cm^<-2>, which brings about no problem for industrial application.

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Application of SiN_x films prepared by Cat-CVD method to GaAs-based transistors

MASUDA Atsushi, TOTSUKA Masahiro, OKU Tomoki, HATTORI Ryo, MATSUMURA Hideki

IEICE technical report. Electron devices 104 ( 111 ) 11 - 16 2004.6

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

SiN_x films prepared by catalytic chemical vapor deposition (Cat-CVD) are dense with low hydrogen content in films even at substrate temperatures around 300℃, and also have low stress. Therefore SiN_x films prepared by Cat-CVD are suitable to passivation films for semiconductor devices and various ceramic and metallic parts. SiN_x films by Cat-CVD method using no plasma excitation are especially suitable to passivation films for compound semiconductor devices since compound semiconductors are easily damaged by charged particles in plasma. In this paper various properties for SiN_x films by Cat-CVD are presented. Performances of both self-aligned gate field-effect transistors (SAGFETs) and high electron mobility transistors (HEMTs) with SiN_x passivation films by Cat-CVD or plasma-enhanced CVD are comparatively studied.

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研究室へようこそ北陸先端科学技術大学院大学(JAIST)・材料科学研究科松村研究室 Cat-CVD法のフラットパネルディスプレイ製造技術への新展開

増田淳, 松村英樹

ディスプレイ 10 ( 4 ) 71 - 74 2004.4

Present Status and Future Prospects of Cat-CVD Technique : Gas-Phase Diagnostics and Device Applications

MASUDA Atsushi, UMEMOTO Hironobu, MATSUMURA Hideki

The Transactions of the Institute of Electronics, Information and Communication Engineers C 87 ( 2 ) 203 - 215 2004.2

Fabrication of Amorphous Silicon Solar Cells by Catalytic Chemical Vapor Deposition

MASUDA Atsushi, NISHIMURA Masaya, KATOUNO Kouichi, SUGITA Ken, IMAMORI Kensaku, ITOH Masaya, MATSUMURA Hideki

IEICE technical report. Component parts and materials 103 ( 412 ) 1 - 6 2003.11

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Performances for solar cells using hydrogenated amorphous silicon (a-Si:H) films prepared by catalytic chemical vapor deposition (Cat-CVD) are introduced together with fundamental techniques for improving solar-cell efficiencies. Low hydrogen (H) content in a-Si:H films, which is possible origin of stability for light soaking, is one of the characteristic features of a-Si:H films by Cat-CVD. A large amount of H atoms in gas phase are also remarkable properties for Cat-CVD. Although it is worried that transparent conducting oxide electrode is reduced by a large amount of H atoms, it was found that zinc oxide (ZnO) coating is effective for suppressing the reduction of tin oxide (SnO_2). Feasibility of microcrystalline silicon (μc-Si:H) and hydrogenated amorphous silicon-carbon(a-Si_<1-x>C_x:H) films prepared by Cat-CVD for p-type window-layer materials was studied. Effects of the buffer layer at p/i interface on improving the solar-cell performances are also demonstrated.

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低温触媒CVD装置の開発 (特集/新規事業創出と大学発ベンチャー)

増田淳, 松村英樹, 南川俊治

化学工業 54 ( 8 ) 631 - 635 2003.8

Behavior of Hydrogens in the poly-Si Film Prepaired by ELA Method : Relationship Between the Concentration of the Hydrogen Molecule in the SiN Film and Crystal growth

KAWAMOTO N, MASUDA A, HASEGAWA I, ANWAR BIN ABD, AZIZ Fakhrul, YOGORO Y, MATSUO N, YAMANO K, MATSUMURA H, HAMADA H, SHIBATA K

Technical report of IEICE. OME 103 ( 8 ) 31 - 34 2003.4

Language：Japanese Publisher：一般社団法人電子情報通信学会

In this study, we clarify the role of hydrogen in the poly-Si film on the Cat-CVD SiN film for its crystal growth by ELA. H_2 concentrations in the SiN film are 2.3, 4.2, 8.2 at%, respectively. For 500mJ/cm^2 and 8shots, Raman peak FWHM drastically increases and some of the poly-Si films disappear by H_2 burst during the ELA for 8.2at%. Spin density of 8.2at% is larger than that of 2.3at%. These results indicate that the hydrogens incorporated in the Si from SiN film during the ELA leave behind the crystal defects in the poly-Si film when they burst into vacuum. For 500mJ/cm^2, although the Δω decreases drastically with increasing the shot number for 2.3 and 4.2at%, it becomes small slowly with the shot number for 8.2at%. The grain size of 2.3at% is larger than that of 4.2at%. We discuss these results by using SPC (solid phase crystallization) model considering the incorporation of the hydrogens and the substrate thermal conductivity. The usefulness of Cat-CVD method in the ELA poly-Si field is also referred.

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Characteristics of Laser Annealing for Amorphous Si Films Prepared by Catalytic Chemical Vapor Deposition and Application to Fabrication of Polycrystalline Si Thin-Film Transistors

MASUDA Atsushi, YOGORO Yusuke, MATSUMURA Hideki, MIYASHITA Kazuyuki, SHIMODA Tatsuya

Technical report of IEICE. OME 103 ( 8 ) 25 - 30 2003.4

Language：Japanese Publisher：一般社団法人電子情報通信学会

Crystallinity of excimer-laser annealed polycrystalline Si (poly-Si) films using amorphous Si (a-Si:H) precursor films prepared by catalytic chemical vapor deposition (Cat-CVD) is presented. No dehydrogenation process is required for Cat-CVD a-Si:H films because of low H content about 1 at. % even at low-temperature deposition below 300 ℃. It was confirmed that the crystallinity is improved using a-Si:H precursor films prepared by Cat-CVD in comparison with that using a-Si:H precursor films prepared by plasma-enhanced CVD. Cat-CVD also has the advantages of high-rate and large-area deposition of a-Si:H precursor films. Top-gate type thin-film transistors fabricated using Cat-CVD a-Si:H precursor films show the mobility reaching 230 cm^2/Vs being comparable to those using low-pressure CVD ones.

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Recent Development of Fabrication Techniques for Thin-Film Transistors by Catalytic Chemical Vapor Deposition

MASUDA Atsushi, MATSUMURA Hideki

IEICE technical report. Component parts and materials 102 ( 434 ) 71 - 76 2002.11

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Recent development of fabrication techniques for thin-film transistors (TFTs) used in flat-panel displays by catalytic chemical vapor deposition (Cat-CVD) is introduced. TFTs using amorphous Si films prepared by Cat-CVD show stable characteristics under bias stress. TFTs using polycrystalline Si films prepared directly by Cat-CVD at low temperatures show the mobility of approximately 50 cm^2/Vs. Amorphous Si films are also useful as precursor films for excimer-laser annealing. The Cat-CVD method appears feasible for mass-production because of high efficiency of gas use, high deposition rate and large-area deposition beyond 1-m size. Development of Cat-CVD apparatus for mass-production is also in progress. It is expected that the Cat-CVD method will be employed in the mass production of amorphous Si TFTs, directly deposited polycrystalline Si TFTs and polycrystalline Si TFTs fabricated by excimer-laser annealing.

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In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si : H solar cells

A Masuda, Y Ishibashi, K Uchida, K Kamesaki, A Izumi, H Matsumura

SOLAR ENERGY MATERIALS AND SOLAR CELLS 74 ( 1-4 ) 373 - 377 2002.10

What is the difference between catalytic CVD and plasma-enhanced CVD? - Gas-phase kinetics and film properties

A Masuda, A Izumi, H Umemoto, H Matsumura

VACUUM 66 ( 3-4 ) 293 - 297 2002.8

Preparation of boron-carbon-nitrogen thin films by magnetron sputtering

H Yokomichi, T Funakawa, A Masuda

VACUUM 66 ( 3-4 ) 245 - 249 2002.8

Influence of atomic hydrogen on transparent conducting oxides during hydrogenated amorphous and microcrystalline Si preparation by catalytic chemical vapor deposition

A Masuda, K Imamori, H Matsumura

THIN SOLID FILMS 411 ( 1 ) 166 - 170 2002.5

Photoinduced volume expansion and contraction in a-Si : H films

N Yoshida, Y Sobajima, H Kamiguchi, T Iida, T Hatano, H Mori, Y Nakae, M Itoh, A Masuda, H Matsumura, S Nonomura

JOURNAL OF NON-CRYSTALLINE SOLIDS 299 516 - 520 2002.4

Effects of atomic hydrogen in gas phase on a-Si : H and poly-Si growth by catalytic CVD

H Umemoto, Y Nozaki, M Kitazoe, K Horii, K Ohara, D Morita, K Uchida, Y Ishibashi, M Komoda, K Kamesaki, A Izumi, A Masuda, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS 299 9 - 13 2002.4

Low-Temperature Fabrication and Characteristics of Poly-Si TFTs by Cat-CVD

Matsumura Hideki, Masuda Atsushi, Izumi Akira

Proceedings of the IEICE General Conference 2002 ( 2 ) 171 - 172 2002.3

Low-resistivity phosphorus-doped polycrystalline silicon thin films formed by catalytic chemical vapor deposition and successive rapid thermal annealing

R Morimoto, A Izumi, A Masuda, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41 ( 2A ) 501 - 506 2002.2

Direct detection of H atoms in the catalytic chemical vapor deposition of the SiH4/H-2 system

H Umemoto, K Ohara, D Morita, Y Nozaki, A Masuda, H Matsumura

JOURNAL OF APPLIED PHYSICS 91 ( 3 ) 1650 - 1656 2002.2

Cat-CVD法による低温poly-Si TFT製造技術

月刊ディスプレイ 8 ( 7 ) 10 - 15 2002

Cat-CVD technology as a new tool for fabrication of large area display

Proceedings of 2nd International Display Manufacturing Conference 143-146 2002

Recent progress of Cat-CVD research in Japan -Bridging between the first and second Cat-CVD conferences-

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 17-22 2002

Cat-CVD法による微結晶シリコン膜の作製とデバイス応用

固体物理 37 ( 12 ) 1003 - 1009 2002

Deposition chemistry in the Cat-CVD processes of the SiH4/NH3 system

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 35-38 2002

Development of Cat-CVD apparatus for 1-m-size large-area deposition

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 75-80 2002

Key factors to improve efficiency of Cat-CVD a-Si solar cells

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 223-226 2002

Coverage properties of silicon nitride film prepared by Cat-CVD method

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 235-238 2002

Fabrication of a-Si1-xCx:H thin films for solar cells by Cat-CVD method using carbon catalyzer

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 239-242 2002

Crystallization by excimer laser annealing for a-Si:H films with low hydrogen content prepared by Cat-CVD

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 355-358 2002

Development of large-area uniform deposition technique on 1-m-size substrate by catalytic chemical vapor deposition

Minoru Karasawa, Masahiro Sakai, Keiji Ishibashi, Masahiko Tanaka, Atsushi Masuda, Hideki Matsumura

Shinku/Journal of the Vacuum Society of Japan 45 ( 3 ) 123 - 126 2002

Application of catalytic chemical vapor deposition to fabrication of next-generation large-area displays

MASUDA Atsushi, MATSUMURA Hideki

OYOBUTURI 71 ( 7 ) 833 - 838 2002

Development of chamber cleaning reducing both cost and environmental pollution by using catalytic cracking reaction of NF_3

NISHIMURA Satoru, MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Component parts and materials 101 ( 395 ) 61 - 65 2001.10

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Etch rates of 3500 nm/min for single-crystalline silicon wafer, 740 nm/min for silicon nitride films on silicon wafer and 50 nm/min for fused quartz are obtained by using NF_3-decomposed species generated by catalytic cracking reaction on a heated tungsten wire at 2400℃. No fluorine contamination on the amorphous silicon layer with a thickness of 120 nm, deposited after the chamber cleanig by using the above NF_3-decomposed species, is detected by X-ray photoelectron spectroscopy. These results indicate that both deposition and in situ chamber cleaning are carried out in the catalytic chemical vapor deposition(Cat-CVD) apparatus, whitch is an important factor for the industrial application.

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Influence of a-Si:H deposition by catalytic CVD on transparent conducting oxides

Kensaku Imamori, Atsushi Masuda, Hideki Matsumura

Thin Solid Films 395 ( 1-2 ) 147 - 151 2001.9

Photo-induced volume changes in a-Si : H films prepared by Cat-CVD method

T Hatano, Y Nakae, H Mori, K Ohkado, N Yoshida, S Nonomura, M Itoh, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 84 - 86 2001.9

Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly-Si

K Kamesaki, A Masuda, A Izumi, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 169 - 172 2001.9

Formation of silicon films for solar cells by the Cat-CVD method

M Komoda, K Kamesaki, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 198 - 201 2001.9

Fabrication of amorphous carbon nitride films by hot-wire chemical vapor deposition

H Yokomichi, A Masuda, N Kishimoto

THIN SOLID FILMS 395 ( 1-2 ) 249 - 252 2001.9

A Cat-CVD Si3N4 film study and its application to the ULSI process

Y Uchiyama, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 275 - 279 2001.9

Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature

H Sato, A Izumi, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 280 - 283 2001.9

Preparation of SiNx passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD

T Minamikawa, Y Yonezawa, A Heya, Y Fujimori, T Nakamura, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 284 - 287 2001.9

High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

M Sakai, T Tsutsumi, T Yoshioka, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 330 - 334 2001.9

Guiding principles for device-grade hydrogenated amorphous silicon films and design of catalytic chemical vapor deposition apparatus

A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 112 - 115 2001.9

High-stability hydrogenated amorphous silicon films for light-soaking prepared by catalytic CVD at high deposition rates

M Itoh, Y Ishibashi, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 138 - 141 2001.9

Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH4

Y Nozaki, M Kitazoe, K Horii, H Umemoto, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 47 - 50 2001.9

Development of Cat-CVD apparatus - a method to control wafer temperatures under thermal influence of heated catalyzer

M Karasawa, A Masuda, K Ishibashi, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 71 - 74 2001.9

Thin-Film Transistors Fabricated by Catalytic Chemical Vapor Deposition Method

SAKAI Masahiro, TSUTSUMI Takayuki, MASUDA Atsushi, MATSUMURA Hideki

IEICE technical report. Electron devices 101 ( 14 ) 27 - 31 2001.4

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

We have developed amorphous silicon thin-film transistors (TFT's) by the catalytic chemical vapor deposition (Cat-CVD) method. The amorphous silicon films deposited at a high rate (1.9 nm s^<-1>) show low spin density (1.6×10^<16>cm^<-3>) measured by electron spin resonance. TFT's, with a field effect mobility about 0.85 cm^2V^<-1>s^<-1>, are obtained with the gate SiN_x and phosphorous-doped amorphous silicon layers also fabricated by Cat-CVD even when the TFT's are fabricated by back channel etching process. The bias stress test has been performed on the TFT samples with SiO_2 as gate dielectric. The stress tolerance is very high, showing that the TFT's are suitable for operating the organic electroluminescence displays.

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Catalytic chemical sputtering: A novel method for obtaining large-grain polycrystalline silicon

H Matsumura, K Kamesaki, A Masuda, A Izumi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 40 ( 3B ) L289 - L291 2001.3

Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition

A Masuda, C Niikura, Y Ishibashi, H Matsumura

SOLAR ENERGY MATERIALS AND SOLAR CELLS 66 ( 1-4 ) 259 - 265 2001.2

Study on catalytic-CVD a-Si:H-based solar cells with high deposition rate

Technical Digest of 12th International Photovoltaic Science and Engineering Conference 243-244 2001

Properties of phosphorus-doped polycrystalline silicon films formed by catalytic chemical vapor deposition and successive rapid thermal annealing

Proceedings of 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices 39-40 2001

Precise substrate temperature control to prepare SiNx films for PZT ferroelectric devices by catalytic chemical vapor deposition

Extended Abstracts of 1st International Meeting on Ferroelectric Random Access Memories 130-131 2001

1 m size large-area deposition of a-Si:H films by catalytic CVD using novel showerhead equipped with catalyzers

Proceedings of 21st International Display Research Conference in conjunction with 8th International Display Workshops 1735-1736 2001

Raman characterization of lattice-matched GaInAsN layers grown on GaAs (001) substrates

Technical Digest of 12th International Photovoltaic Science and Engineering Conference 665-666 2001

What is the difference between catalytic CVD and plasma-enhanced CVD? -Gas-phase kinetics and film properties

Proceedings of 6th International Symposium on Sputtering & Plasma Processes 213-216 2001

Preparation of boron-carbon-nitrogen thin films by magnetron sputtering

Proceedings of 6th International Symposium on Sputtering & Plasma Processes 402-405 2001

Properties of thin-film transistors using amorphous silicon films prepared by catalytic CVD with high deposition rate

Digest of Technical Papers 8th International Workshop on Active-Matrix Liquid-Crystal Displays -TFT Technologies and Related Materials- 147-150 2001

In-situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells

Technical Digest of 12th International Photovoltaic Science and Engineering Conference 241-242 2001

Effects of double bonding configurations on thermal stability of low-hydrogen concentration fluorinated amorphous carbon thin-films with low dielectric constant prepared by sputtering with hydrogen dilution

H Yokomichi, A Masuda

VACUUM 59 ( 2-3 ) 771 - 776 2000.11

Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy

Y Nozaki, K Kongo, T Miyazaki, M Kitazoe, K Horii, H Umemoto, A Masuda, H Matsumura

JOURNAL OF APPLIED PHYSICS 88 ( 9 ) 5437 - 5443 2000.11

Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition: application to preparation of Er-doped hydrogenated amorphous Si films

A Masuda, J Sakai, H Matsumura

VACUUM 59 ( 2-3 ) 635 - 640 2000.11

Proposal of chemical sputtering method and its application to prepare large grain size poly-Si films

KAMESAKI Koji, MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Component parts and materials 100 ( 396 ) 7 - 12 2000.10

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Si films are usually prepared by chemical vapor deposition(CVD) method. In the present work, Si films are formed by utilizing chemical transport of SiH_n species which are generated by the reaction between a solid Si and H atoms. We named the method"chemical sputtering"from an analogy to the conventional physical sputtering. The deposited Si films on Si, SiO_2 and quartz substrates are polycrystalline ones, and there is no amorphous phase detected by Raman spectroscopy. The grain size becomes large, compared with polycrystalline Si films formed by any low-temperature deposition methods ever reported. The grain size exceeds 1μm for the films on SiO_2 substrate with the thickness about 1μm.

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Control of polycrystalline silicon structure by the two-step deposition method

A Heya, A Izumi, A Masuda, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39 ( 7A ) 3888 - 3895 2000.7

Effects of nitrogen incorporation on structural properties of fluorinated amorphous carbon films

H Yokomichi, A Masuda

JOURNAL OF NON-CRYSTALLINE SOLIDS 271 ( 1-2 ) 147 - 151 2000.6

Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal

A Heya, A Masuda, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 ( Pt.A ) 619 - 623 2000.5

Transport mechanism of deposition precursors in catalytic chemical vapor deposition studied using a reactor tube

N Honda, A Masuda, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 ( Pt.A ) 100 - 104 2000.5

Novel deposition technique of Er-doped a-Si : H combining catalytic chemical vapor deposition and pulsed laser-ablation

A Masuda, J Sakai, H Akiyama, O Eryu, K Nakashima, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 ( Pt.A ) 136 - 140 2000.5

Low-temperature preparation of poly-Si films by catalytic CVD and application to TFTs

MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Electron devices 100 ( 1 ) 13 - 18 2000.4

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD, is one of the promising candidates for large-area thin-film formation method at low temperatures. Recently, Cat-CVD is widely studied in order to apply to device-fabrication process in semiconductor industry. Polycrystalline silicon (poly-Si) films prepared by Cat-CVD are expected to be applied to thin-film transistors (TFTs). In 1991 the authors succeeded in preparing poly-Si Films by this method for the first time. Until 1998 they systematically studied preparation of poly-Si films by Cat-CVD and application to TFTs under the R&D Projects in Cooperation with Academic Institutions "Cat-CVD Fabrication Processes for Semiconductor Devices" from the New Energy and Industrial Technology Development Organization (NEDO). In this paper various structural and electrical properties of poly-Si films prepared by Cat-CVD at low temperatures are presented.

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Luminescence Properties of Er-Doped a-Si:H Films Prepared by Cat-CVD Combined with Pulsed Laser Ablation

MASUDA Atsushi, SAKAI Joe, AKIYAMA Haruo, ERYU Osamu, NAKASHIMA Kenshiro, MATSUMURA Hideki

2000 ( 10 ) 31 - 35 2000.2

High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 311 - 314 2000

Development of Cat-CVD apparatus-A method to control wafer temperatures under thermal influence of heated catalyzer

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 117 - 120 2000

High stability amorphous silicon films for light soaking prepared by catalytic CVD with high deposition rate

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 143 - 146 2000

Influence of a-Si : H deposition by catalytic CVD on transparent conducting oxides

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 147 - 150 2000

Formation of silicon films for solar cells by Cat-CVD method

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 163 - 166 2000

Fabrication of amorphous carbon nitride films by hot wire chemical vapor deposition

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 205 - 208 2000

Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH4

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 41 - 44 2000

Photoinduced volume change in a-Si : H films prepared by Cat-CVD method

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 69 - 72 2000

Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly-Si

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 85 - 88 2000

Guiding principles for obtaining device-grade hydrogenated amorphous silicon films by catalytic chemical vapor deposition

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 99 - 102 2000

Effect of atomic H and chamber cleaning in catalytic CVD on reproducibility of a-Si : H film properties

Digest of Technical Papers 2000 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials- 219 - 222 2000

Study on Cat-CVD Si3N4 films and its application to ULSI process

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 241 - 244 2000

Low-k silicon nitride film for copper interconnects process prepared by Cat-CVD method at low temperature

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 245 - 248 2000

Preparation of SiNx passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 253 - 256 2000

Mixing mechanism of h-GaN in c-GaN growth on GaAs (001) substrates

A Hashimoto, H Wada, T Ueda, Y Nishio, A Masuda, A Yamamoto

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 176 ( 1 ) 519 - 524 1999.11

Effect of sputtering with hydrogen dilution on fluorine concentration of low hydrogen content fluorinated amorphous carbon thin films with low dielectric constant

H Yokomichi, A Masuda

JOURNAL OF APPLIED PHYSICS 86 ( 5 ) 2468 - 2472 1999.9

Annealing effect of Pb(Zr, Ti)O-3 ferroelectric capacitor in active ammonia gas cracked by catalytic chemical vapor deposition system

T Minamikawa, Y Yonezawa, T Nakamura, Y Fujimori, A Masuda, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38 ( 9B ) 5358 - 5360 1999.9

Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition

C Niikura, A Masuda, H Matsumura

JOURNAL OF APPLIED PHYSICS 86 ( 2 ) 985 - 990 1999.7

Study on improvement on uniformity of Cat-CVD SiNx thin films

KUDO Akiyoshi, MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Electron devices 99 ( 21 ) 59 - 66 1999.4

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

SiNx thin-film deposition by catalytic CVD (Cat-CVD) method is expected to realize a 1ow-damage plasmaldss process in fabrication of passivation fi1ms for compound-semiconductor devices etc. A tungsten wire was used as a catalyzer to decompose SiH_4 and NH_3 gases, SiNx thin films were deposited on GaAs substrates, and the uniformity of well-stoichiometric (Si_3N_4) films, with about 2.0 in refractive index, was evaluated by ellipsometry. It was found that the film thickness decreases about 15% circumferentially from the center, but the uniformity of refractive index keeps within about ±2.5% in a 4-inch wafer even though Si and N are supplied seperately. It is confirmed that preparation of device-quality SiNx thin films on large substrates can be achieved by Cat-CVD method.

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Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method

A Izumi, A Masuda, H Matsumura

THIN SOLID FILMS 343 528 - 531 1999.4

Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten

A Heya, A Masuda, H Matsumura

APPLIED PHYSICS LETTERS 74 ( 15 ) 2143 - 2145 1999.4

Direct crystal growth of Poly-Si films on glass substrates by catalytic CVD with incubation time

Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials- 123 - 126 1999

Structural properties of polycrystalline silicon thin films prepared by catalytic CVD

Extended Abstract of the Open Meeting of Cat-CVD Project 45 - 48 1999

Electrical properties of polycrystalline silicon films prepared by catalytic CVD

Extended Abstract of the Open Meeting of Cat-CVD Project 49 - 52 1999

Structural control of Cat-CVD poly-Si films by gas phase reaction using pure SiH4 gas

Technical Digest of 11th International Photovoltaic Science and Engineering Conference 781 - 782 1999

Transport and generation mechanism of deposition precursors in catalytic CVD

Extended Abstract of the Open Meeting of Cat-CVD Project 9 - 13 1999

Detection of free radicals in Cat-CVD processes by laser induced fluorescence spectroscopy

Extended Abstract of the Open Meeting of Cat-CVD Project 15 - 18 1999

Suppression of heat radiation in catalytic CVD using "catalytic plate"

Extended Abstract of the Open Meeting of Cat-CVD Project 19 - 22 1999

High-rate deposition of SiNx thin films prepared by Cat-CVD method

Extended Abstract of the Open Meeting of Cat-CVD Project 27 - 29 1999

Effect of exposure of Pb(Zr,Ti)O3 ferroelectric capacitors to active ammonia gas cracked by catalytic chemical vapor deposition system

Extended Abstract of the Open Meeting of Cat-CVD Project 31 - 34 1999

Crystallization of a-Si film by atomic hydrogen anneal at low temperatures

Extended Abstract of the Open Meeting of Cat-CVD Project 39 - 43 1999

Dominant parameter determining dangling-bond density in a Si : H films prepared by catalytic CVD

Technical Digest of 11th International Photovoltaic Science and Engineering Conference 399 - 400 1999

Suppression of hexagonal GaN mixing by As4 molecular beam in cubic GaN growth on GaAs (0 0 1) substrates

Akihiro Hashimoto, Takanori Motizuki, Hideki Wada, Atsushi Masuda, Akio Yamamoto

Journal of Crystal Growth 201 392 - 395 1999

Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition : Application to preparation of Er-doped hydrogenated amorphous Si films

Proceedings of the 5th International Symposium on Sputtering & Plasma Processes 23 - 24 1999

Thermal stability of low hydrogen concentration fluorinated amorphous carbon thin films with low dielectric constant prepared by sputtering with hydrogen dilution

Proceedings of the 5th International Symposium on Sputtering & Plasma Processes 215 - 216 1999

Improvement of polycrystalline silicon film by atomic hydrogen anneal at low temperature

Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials- 119 - 122 1999

Material properties of heteroepitaxial yttria-stabilized zirconia films with controlled yttria contents on Si prepared by reactive sputtering

S Horita, M Watanabe, S Umemoto, A Masuda

VACUUM 51 ( 4 ) 609 - 613 1998.12

Effects of oxygen gas addition and substrate cooling on preparation of amorphous carbon nitride films by magnetron sputtering

H Yokomichi, H Sakima, A Masuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 37 ( 9A ) 4722 - 4725 1998.9

Surface cleaning of garium arsenide and formation of silicon nitride using by catalytic-CVD method

IZUMI Akira, MASUDA Atsushi, MATSUMURA Hideki

IEICE technical report. Electron devices 98 ( 184 ) 41 - 46 1998.7

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

We proposed a novel method of low temperature surface cleaning technology of GaAs and formation of high quality silicon nitride(SiN_x) films by catalytic chemical vapor deposition(Cat-CVD) method. An NH_3 gas was used for the surface cleaning of(100)GaAs without any chemical treatment at the substrate temperature as low as 150℃. XPS measurements revealed obvious reduction of intensities of oxygen related peaks of GaAs and appearance of nitrogen related peaks from long time treated samples. Using a SiH_4 and NH_3 gas mixture, stoichiometric, conformal step coverage and low hydrogen content SiN_x films were obtained below 300℃ by this method.

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Fabrication of Pb(Zr,Ti)O<inf>3</inf>/MgO/GaN/GaAs structure for optoelectronic device applications

Atsushi Masuda, Shinya Morita, Hideki Shigeno, Akiharu Morimoto, Tatsuo Shimizu, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe

Journal of Crystal Growth 189-190 227 - 230 1998.6

Structural and electrical properties of yttria-stabilized zirconia films with controlled Y content heteroepitaxially grown on Si by reactive sputtering

S Horita, M Watanabe, A Masuda

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 54 ( 1-2 ) 79 - 83 1998.6

Preparation of fluorinated amorphous carbon thin films

H Yokomichi, T Hayashi, T Amano, A Masuda

JOURNAL OF NON-CRYSTALLINE SOLIDS 227 ( Pt.A ) 641 - 644 1998.5

Changes in structure and nature of defects by annealing of fluorinated amorphous carbon thin films with low dielectric constant

H Yokomichi, T Hayashi, A Masuda

APPLIED PHYSICS LETTERS 72 ( 21 ) 2704 - 2706 1998.5

Structural and conductivity change caused by N, O and C incorporation in a-Si : H

T Shimizu, T Ishii, M Kumeda, A Masuda

JOURNAL OF NON-CRYSTALLINE SOLIDS 227 ( Pt.A ) 403 - 406 1998.5

Structural and electrical anisotropy and high absorption in poly-Si films prepared by catalytic chemical vapor deposition

A Masuda, R Iiduka, A Heya, C Niikura, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS 227 ( Pt.B ) 987 - 991 1998

触媒CVD(Cat-CVD)法による低温薄膜形成

増田淳, 和泉亮, 松村英樹

表面 36 ( 3 ) 149 - 156 1998

5a-A-11 Structural defects and light-induced effects of fluorinated amorphous carbon

Yokomichi H., Hayashi T., Amano T., Masuda A.

Meeting abstracts of the Physical Society of Japan 52 ( 2 ) 141 - 141 1997.9

Influence of Pb incorporation on light-induced phenomena in amorphous Ge100-x-yPbxSy thin films

A Masuda, Y Yonezawa, A Morimoto, M Kumeda, T Shimizu

JOURNAL OF NON-CRYSTALLINE SOLIDS 217 ( 2-3 ) 121 - 135 1997.9

Preparation of fluorinated amorphous carbon thin films with low dielectric constant

HAYASHI Tohru, AMANO Tomihiro, MASUDA Atsushi, YOKOMICHI Haruo

Technical report of IEICE. LQE 97 ( 100 ) 1 - 6 1997.6

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Fluorinated amorphous carbon(a-C:F) thin films were prepared using CH_4 and CF_4 gases by the plasma chemical vapor deposition (CVD) method. Electron spin resonance(ESR), infrared(IR) absorption, optical absorption, X-ray photoelectron spectroscopy(XPS) and dielectric constant measurements were carried out in order to investigate the basic properties of these films. XPS measurements revealed that the fluorine concentration of the films increased with increasing R, where R is the ratio of CF_4 flow rate to the total gas flow rate. When R = 0.97, the fluorine concentration increased remarkably to approximately 67 at.%. In this film, CF_3 mode appeared in the IR spectrum and the hydrogen-related modes disappeared. The dielectric constant of the film was estimated to be 2.2 at 1MHz and the line width of the ESR spectrum of the film, 4.2 mT, was broader than that of the other films. We also discuss the effect of thermal annealing on dielectric constant and the fluorine bonding configuration.

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Interface control of Pb(ZrxTi1-x)O-3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer

S Horita, T Naruse, M Watanabe, A Masuda, T Kawada, Y Abe

APPLIED SURFACE SCIENCE 117 429 - 433 1997.6

Nitrogen-doping effects on electrical, optical, and structural properties in hydrogenated amorphous silicon

A Masuda, K Itoh, K Matsuda, Y Yonezawa, M Kumeda, T Shimizu

JOURNAL OF APPLIED PHYSICS 81 ( 10 ) 6729 - 6737 1997.5

Nitrogen- and ammonia-plasma nitridation of hydrogenated amorphous silicon

A Masuda, S Yoshimoto, Y Yonezawa, A Morimoto, M Kumeda, T Shimizu

APPLIED SURFACE SCIENCE 113 610 - 613 1997.4

Fabrication of Pb(Zr,Ti)O3/MgO/GaN/GaAs structure for optoelectronic device applications"

Proceedings of 2nd International Conference on Nitride Semiconductors 192 1997

Material properties of heteroepitaxial yttria-stabilized zirconia films with controlled Y content on Si prepared by reactive sputtering

Proceedings of the 4th International Symposium on Sputtering & Plasma Processes 163 - 168 1997

Noise reduction of pHEMTs with plasmaless SiN passivation by catalytic CVD

R Hattori, G Nakamura, S Nomura, T Ichise, A Masuda, H Matsumura

GAAS IC SYMPOSIUM - 19TH ANNUAL, TECHNICAL DIGEST 1997 78 - 80 1997

Heteroepitaxial growth of YSZ films with controlled Y content on Si by reactive sputtering

WATANABE Mikio, NARUSE Tetsuya, MASUDA Atsushi, HORITA Susumu

IEICE technical report. Component parts and materials 96 ( 349 ) 19 - 25 1996.11

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Yttria-stabilized zirconia (YSZ) films with controlled Y content were heteroepitaxially grown on n-Si (100) substrates by reactive sputtering and their material properties were investigated. It was found that the films deposited with 2.3 to 19.7at.% Y and with 1.2at.% Y had a cubic YSZ (100) structure and a monoclinic (ZrO_2)_<1-x>(Y_2O_3)_x(100)/cubic YSZ(100) structure, respectively, on Si (100) substrates. The leakage current of the film at the applied voltage of 5V was decreased to 10^<-7> A/cm^2 by reducing the Y content to 1.2 at.%. The capacitance (C)-voltage(V) characteristics of the samples showed the hysteresis curve derived from the ion drift and the hysteresis width of the sample with 1.2at.% Y was the narrowest in our study. The relative dielectric constant estimated from the C-V measurements at 1 MHz decreased from 24 to 16 with decreasing the Y content from 9.4 to 1.2 at%.

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Ambient-pressure influence on droplet formation and thickness distribution in pulsed laser ablation

A Masuda, K Matsuda, S Usui, Y Yonezawa, T Minamikawa, A Morimoto, T Shimizu

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 41 ( 1 ) 161 - 165 1996.10

Influence of buffer layers on lead magnesium niobate titanate thin films prepared by pulsed laser ablation

T Nakamura, A Masuda, A Morimoto, T Shimizu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 35 ( 9A ) 4750 - 4754 1996.9

N-2-plasma-nitridation effects on porous silicon

H Yokomichi, A Masuda, Y Yonezawa, T Shimizu

THIN SOLID FILMS 281 ( 1/2 ) 568 - 571 1996.8

X-ray photoelectron spectroscopy and electron spin resonance studies on O-2 and N2O plasma oxidation of silicon

A Masuda, Y Yonezawa, A Morimoto, M Kumeda, T Shimizu

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 39 ( 3 ) 173 - 178 1996.7

Origin of charged dangling bonds in nitrogen-doped hydrogenated amorphous silicon

A Masuda, K Itoh, M Kumeda, T Shimizu

JOURNAL OF NON-CRYSTALLINE SOLIDS 200 ( Pt 1 ) 395 - 398 1996.5

Mechanism of stoichiometric deposition of volatile elements in multimetal-oxide films prepared by pulsed laser ablation

A Masuda, K Matsuda, Y Yonezawa, A Morimoto, T Shimizu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 35 ( 2B ) L237 - L240 1996.2

Preparation and crystallographic characterizations of highly oriented Pb(Zr0.52Ti0.48)O-3 films and MgO buffer layers on (100)GaAs and (100)Si by pulsed laser ablation

A Masuda, Y Yamanaka, M Tazoe, T Nakamura, A Morimoto, T Shimizu

JOURNAL OF CRYSTAL GROWTH 158 ( 1-2 ) 84 - 88 1996.1

HIGHLY ORIENTED PB(ZR,TI)O-3 THIN-FILMS PREPARED BY PULSED-LASER ABLATION ON GAAS AND SI SUBSTRATES WITH MGO BUFFER LAYER

A MASUDA, Y YAMANAKA, M TAZOE, Y YONEZAWA, A MORIMOTO, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 34 ( 9B ) 5154 - 5157 1995.9

INTERFACIAL NEUTRAL-DANGLING-BOND AND CHARGED-DANGLING-BOND DENSITIES BETWEEN HYDROGENATED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON NITRIDE IN TOP NITRIDE AND BOTTOM NITRIDE STRUCTURES

H MIN, FUKUSHI, I, A MASUDA, A MORIMOTO, M KUMEDA, T SHIMIZU

APPLIED PHYSICS LETTERS 66 ( 20 ) 2718 - 2720 1995.5

NH3-PLASMA-NITRIDATION PROCESS OF (100)GAAS SURFACE OBSERVED BY ANGLE-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY

A MASUDA, Y YONEZAWA, A MORIMOTO, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 34 ( 2B ) 1075 - 1079 1995.2

CORRELATION BETWEEN AC TRANSPORT AND ELECTRON-SPIN-RESONANCE IN AMORPHOUS GE-S FILMS ALLOYED WITH LEAD

K SHIMAKAWA, T KATO, K HAYASHI, A MASUDA, M KUMEDA, T SHIMIZU

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES 70 ( 5 ) 1035 - 1044 1994.11

ULTRATHIN SIO2-FILMS ON SI FORMED BY N2O-PLASMA OXIDATION TECHNIQUE

A MASUDA, Y YONEZAWA, A MORIMOTO, M KUMEDA, T SHIMIZU

APPLIED SURFACE SCIENCE 81 ( 3 ) 277 - 280 1994.11

RELATIONSHIP BETWEEN ELECTRICAL-CONDUCTIVITY AND CHARGED-DANGLING-BOND DENSITY IN NITROGEN-DOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

A MASUDA, K ITOH, JH ZHOU, M KUMEDA, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 33 ( 9B ) L1295 - L1297 1994.9

ORIENTATION OF MGO THIN-FILMS ON SI(100) AND GAAS(100) PREPARED BY ELECTRON-BEAM EVAPORATION

A MASUDA, K NASHIMOTO

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 33 ( 6A ) L793 - L796 1994.6

Surface nitridation process of(100)GaAs by NH3-plasma treatment with planar magnetic field

Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials 193 - 195 1994

SPECTROSCOPIC STUDY ON N2O-PLASMA OXIDATION OF HYDROGENATED AMORPHOUS-SILICON AND BEHAVIOR OF NITROGEN

A MASUDA, FUKUSHI, I, Y YONEZAWA, T MINAMIKAWA, A MORIMOTO, M KUMEDA, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 32 ( 6A ) 2794 - 2802 1993.6

NOVEL OXIDATION PROCESS OF HYDROGENATED AMORPHOUS-SILICON UTILIZING NITROUS-OXIDE PLASMA

A MASUDA, A MORIMOTO, M KUMEDA, T SHIMIZU, Y YONEZAWA, T MINAMIKAWA

APPLIED PHYSICS LETTERS 61 ( 7 ) 816 - 818 1992.8

LIGHT-INDUCED ESR AND DISAPPEARANCE OF PHOTODARKENING IN AMORPHOUS GE-S FILMS ALLOYED WITH LEAD

A MASUDA, M KUMEDA, A MORIMOTO, T SHIMIZU

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 985 - 988 1991.12

RELATIONSHIP BETWEEN PHOTODARKENING AND LIGHT-INDUCED ESR IN AMORPHOUS GE-S FILMS ALLOYED WITH LEAD

A MASUDA, M KUMEDA, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 30 ( 6B ) L1075 - L1078 1991.6

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