Japan Advanced Institute of Science and Technology

Potential-induced degradation of n-type front-emitter crystalline silicon photovoltaic modules — Comparison between indoor and outdoor test results

Keisuke Ohdaira, Minoru Akitomi, Yasuo Chiba, Atsushi Masuda

Solar Energy Materials and Solar Cells   249   112038 - 112038   2023.1

Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Seira Yamaguchi, Atsushi Masuda, Kazuhiro Marumoto, Keisuke Ohdaira

Advanced Energy and Sustainability Research   2200167 - 2200167   2022.12

Polarization-Type Potential-Induced Degradation in Front-Emitter p-Type and n-Type Crystalline Silicon Solar Cells

Seira Yamaguchi, Sachiko Jonai, Kyotaro Nakamura, Kazuhiro Marumoto, Yoshio Ohshita, Atsushi Masuda

ACS Omega   2022.10

Effects of SiN _<i>x</i> refractive index and SiO ₂ thickness on polarization‐type potential‐induced degradation in front‐emitter n‐type crystalline‐silicon photovoltaic cell modules

Seira Yamaguchi, Kyotaro Nakamura, Taeko Semba, Keisuke Ohdaira, Kazuhiro Marumoto, Yoshio Ohshita, Atsushi Masuda

Energy Science &amp; Engineering   10 ( 7 )   2268 - 2275   2022.3

Effect of temperature and pre-annealing on the potential-induced degradation of silicon heterojunction photovoltaic modules

Jiaming Xu, Huynh Thi Cam Tu, Atsushi MASUDA, Keisuke OHDAIRA

Japanese Journal of Applied Physics   61 ( SC )   SC1021 - SC1021   2021.12

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Seira Yamaguchi, Bas B. Van Aken, Atsushi Masuda, Keisuke Ohdaira

Solar RRL   5 ( 12 )   2100708 - 2100708   2021.11

Influence of light irradiation on the charge-accumulation-type potential-induced degradation of n-type front-emitter crystalline Si photovoltaic modules

Rongrong Zhao, Huynh Thi Cam Tu, Atsushi MASUDA, Keisuke OHDAIRA

Japanese Journal of Applied Physics   61 ( SB )   SB1023 - SB1023   2021.9

Effects of passivation configuration and emitter surface doping concentration on polarization-type potential-induced degradation in n-type crystalline-silicon photovoltaic modules

Seira Yamaguchi, Bas B. Van Aken, Maciej K. Stodolny, Jochen Löffler, Atsushi Masuda, Keisuke Ohdaira

Solar Energy Materials and Solar Cells   226   111074 - 111074   2021.7

Influence of light illumination on the potential-induced degradation of n-type interdigitated back-contact crystalline Si photovoltaic modules

Yuansong Xu, Atsushi MASUDA, Keisuke OHDAIRA

Japanese Journal of Applied Physics   60 ( SB )   SBBF08 - SBBF08   2021.1

Potential-induced degradation in photovoltaic modules composed of interdigitated back contact solar cells in photovoltaic systems under actual operating conditions

Tetsuyuki Ishii, Sungwoo Choi, Ritsuko Sato, Yasuo Chiba, Atsushi Masuda

PROGRESS IN PHOTOVOLTAICS   28 ( 12 )   1322 - 1332   2020.12

Effect of a silicon nitride film on the potential-induced degradation of n-type front-emitter crystalline silicon photovoltaic modules

Tomoyasu Suzuki, Atsushi Masuda, Keisuke Ohdaira

Japanese Journal of Applied Physics   59 ( 10 )   104002 - 104002   2020.10

Influence of emitter position of silicon heterojunction photovoltaic solar cell modules on their potential-induced degradation behaviors Reviewed

Seira Yamaguchi, Chizuko Yamamoto, Yoshio Ohshita, Keisuke Ohdaira, Atsushi Masuda

Solar Energy Materials and Solar Cells   216   110716 - 110716   2020.10

Influence of hygrothermal stress on potential-induced degradation for homojunction and heterojunction crystalline Si photovoltaic modules Reviewed

Atsushi MASUDA, Chizuko Yamamoto, Yukiko Hara, Sachiko Jonai, Yasushi Tachibana, Takeshi Toyoda, Toshiharu Minamikawa, Seira Yamaguchi, Keisuke OHDAIRA

Japanese Journal of Applied Physics   2020.6

Influence of backsheet materials on potential-induced degradation in n-type crystalline-silicon photovoltaic cell modules Reviewed

Seira Yamaguchi, Chizuko Yamamoto, Atsushi Masuda, Keisuke Ohdaira

Japanese Journal of Applied Physics   58   120901   2019.12

Effect of additives in electrode paste of p-type crystalline Si solar cells on potential-induced degradation Reviewed

Sachiko Jonai, Aki Tanaka, Kazuo Muramatsu, Genki Saito, Kyotaro Nakamura, Atsushi Ogura, Yoshio Ohshita, Atsushi Masuda

Solar Energy   188   1292 - 1297   2019.8

Correction: Corrosion-induced AC impedance elevation in front electrodes of crystalline silicon photovoltaic cells within field-aged photovoltaic modules (IEEE Journal of Photovoltaics (2019) 9:3 (741-751) DOI: 10.1109/JPHOTOV.2019.2893442)

Tadanori Tanahashi, Norihiko Sakamoto, Hajime Shibata, Atsushi Masuda

IEEE Journal of Photovoltaics   9 ( 4 )   1154   2019.7

Corrosion under Front Electrodes of Crystalline Silicon Photovoltaic Cells Predominantly Contributes to Their Performance Degradation

Tadanori Tanahashi, Norihiko Sakamoto, Hajime Shibata, Atsushi Masuda

Conference Record of the IEEE Photovoltaic Specialists Conference   2013 - 2016   2019.6

Influence of sodium on the potential-induced degradation for n-type crystalline silicon photovoltaic modules Reviewed

Keisuke Ohdaira, Yutaka Komatsu, Tomoyasu Suzuki, Seira Yamaguchi, Atsushi Masuda

Applied Physics Express   12   064004   2019.5

Rapid progression and subsequent saturation of polarization-type potential-induced degradation of n-type front-emitter crystalline-silicon photovoltaic modules Reviewed

Seira Yamaguchi, Kyotaro Nakamura, Atsushi Masuda, Keisuke Ohdaira

JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 12 )   122301 - 122301   2018.11

Performance degradation due to outdoor exposure and seasonal variation in amorphous silicon photovoltaic modules Reviewed

Sungwoo CHOI, Tetsuyuki ISHII, Ritsuko SATO, Yasuo CHIBA, Atsushi MASUDA

Thin Solid Films   661   116 - 121   2018.9

Sodium distribution at the surface of silicon nitride film after potential-induced degradation test and recovery test of photovoltaic modules

Fumitaka Ohashi, Yoshiki Mizuno, Hiroki Yoshida, Hiroya Kosuga, Taishi Furuya, Ryo Fuseya, Ruben Jerónimo Freitas, Yukiko Hara, Atsushi Masuda, Shuichi Nonomura

Japanese Journal of Applied Physics   57 ( 8 )   2018.8

Localization and characterization of a degraded site in crystalline silicon photovoltaic cells exposed to acetic acid vapor Reviewed

Tadanori Tanahashi, Norihiko Sakamoto, Hajime Shibata, Atsushi Masuda

IEEE Journal of Photovoltaics   8 ( 4 )   997 - 1004   2018.7

Multistage performance deterioration in n-type crystalline silicon photovoltaic modules undergoing potential-induced degradation Reviewed

Yutaka Komatsu, Seira Yamaguchi, Atsushi Masuda, Keisuke Ohdaira

Microelectronics Reliability   84   127 - 133   2018.5

Comprehensive study of potential-induced degradation in silicon heterojunction photovoltaic cell modules Reviewed

Seira Yamaguchi, Chizuko Yamamoto, Keisuke Ohdaira, Atsushi Masuda

Progress in Photovoltaics: Research and Applications   26   697 - 708   2018.4

Guiding principle for crystalline Si photovoltaic modules with high tolerance to acetic acid Reviewed

Atsushi Masuda, Yukiko Hara

Japanese Journal of Applied Physics   57 ( 4 )   2018.4

Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants Reviewed

Kohjiro Hara, Hiroto Ohwada, Tomoyoshi Furihata, Atsushi Masuda

Japanese Journal of Applied Physics   57 ( 2 )   2018.2

Bending cyclic load test for crystalline silicon photovoltaic modules Reviewed

Soh Suzuki, Takuya Doi, Atsushi Masuda, Tadanori Tanahashi

Japanese Journal of Applied Physics   57 ( 2 )   2018.2

Annual degradation rates of recent crystalline silicon photovoltaic modules Reviewed

Tetsuyuki Ishii, Atsushi Masuda

Progress in Photovoltaics: Research and Applications   25 ( 12 )   953 - 967   2017.12

Causes of Degradation Identified by the Extended Thermal Cycling Test on Commercially Available Crystalline Silicon Photovoltaic Modules Reviewed

Shinji Kawai, Tadanori Tanahashi, Yutaka Fukumoto, Fujio Tamai, Atsushi Masuda, Michio Kondo

IEEE Journal of Photovoltaics   7 ( 6 )   1511 - 1518   2017.11

Time-dependent changes in copper indium gallium (di)selenide and cadmium telluride photovoltaic modules due to outdoor exposure

Choi Sungwoo, Sato Ritsuko, Ishii Tetsuyuki, Chiba Yasuo, Masuda Atsushi

Jpn. J. Appl. Phys.   56 ( 8 )   08MD06   2017.7

Influence of surface structure of n-type single-crystalline Si solar cells on potential-induced degradation Reviewed

Kohjiro Hara, Kinichi Ogawa, Yusuke Okabayashi, Hiroyuki Matsuzaki, Atsushi Masuda

SOLAR ENERGY MATERIALS AND SOLAR CELLS   166   132 - 139   2017.7

Potential-induced degradation of thin-film Si photovoltaic modules Reviewed

Atsushi Masuda, Yukiko Hara

JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 4 )   2017.4

Reduction in the short-circuit current density of silicon heterojunction photovoltaic modules subjected to potential-induced degradation tests Reviewed

Seira Yamaguchi, Chizuko Yamamoto, Keisuke Ohdaira, Atsushi Masuda

Solar Energy Materials and Solar Cells   161   439 - 443   2017.3

Effect of light irradiation and forward bias during PID tests of CIGS PV modules Reviewed

Hiroshi Tomita, Kinichi Ogawa, Darshan Schmitz, Hajime Shibata, Shuuji Tokuda, Atsushi Masuda

Proceedings of SPIE - The International Society for Optical Engineering   10370   2017

Microscopic aspects of potential-induced degradation phenomena and their recovery processes for p-type crystalline Si photovoltaic modules Reviewed

Atsushi Masuda, Minoru Akitomi, Masanao Inoue, Keizo Okuwaki, Atsuo Okugawa, Kiyoshi Ueno, Toshiharu Yamazaki, Kohjiro Hara

Current Applied Physics   16 ( 12 )   1659 - 1665   2016.12

Potential-induced degradation behavior of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter Reviewed

Seira Yamaguchi, Atsushi Masuda, Keisuke Ohdaira

Conference Record of the IEEE Photovoltaic Specialists Conference   2016-   938 - 942   2016.11

Progression of rapid potential-induced degradation of n-type single-crystalline silicon photovoltaic modules Reviewed

Seira Yamaguchi, Atsushi Masuda, Keisuke Ohdaira

Applied Physics Express   9 ( 11 )   2016.11

Changes in the current density-voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation Reviewed

Seira Yamaguchi, Atsushi Masuda, Keisuke Ohdaira

Solar Energy Materials and Solar Cells   151   113 - 119   2016.7

Effects of UV on power degradation of photovoltaic modulesin combined acceleration tests Reviewed

Trang Ngo, Yushi Heta, Takuya Doi, Atsushi Masuda

Japanese Journal of Applied Physics   55 ( 5 )   2016.5

Sequential and combined acceleration tests for crystalline Si photovoltaic modules Reviewed

Atsushi Masuda, Chizuko Yamamoto, Naomi Uchiyama, Kiyoshi Ueno, Toshiharu Yamazaki, Kazunari Mitsuhashi, Akihiro Tsutsumida, Jyunichi Watanabe, Jyunko Shirataki, Keiko Matsuda

Japanese Journal of Applied Physics   55 ( 4 )   2016.4

Behavior of the potential-induced degradation of photovoltaic modules fabricated using flat mono-crystalline silicon cells with different surface orientations Reviewed

Seira Yamaguchi, Atsushi Masuda, Keisuke Ohdaira

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 4 )   2016.4

Consortium style study on the development of highly reliable photovoltaic modules and acceleration test methods: Management of the “consortium study on fabrication and characterization of solar cell modules with long life and high reliability” Reviewed

Atsushi Masuda, Nanako Igawa

Synthesiology   9 ( 1 )   42 - 54   2016.3

Consortium style study on the development of highly reliable photovoltaic modules and acceleration test methods: Management of the “consortium study on fabrication and characterization of solar cell modules with long life and high reliability” Reviewed

Atsushi Masuda, Nanako Igawa

Synthesiology   9 ( 1 )   39 - 50   2016.3

Consideration on Na diffusion and recovery phenomena in potential-induced degradation for crystalline Si photovoltaic modules Reviewed

Atsushi Masuda, Yukiko Hara, Sachiko Jonai

Japanese Journal of Applied Physics   55 ( 2 )   2016.2

Acceleration of degradation by highly accelerated stress test and air-included highly accelerated stress test in crystalline silicon photovoltaic modules Reviewed

Soh Suzuki, Tadanori Tanahashi, Takuya Doi, Atsushi Masuda

Japanese Journal of Applied Physics   55 ( 2 )   2016.2

Multi angle laser light scattering evaluation of field exposed thermoplastic photovoltaic encapsulant materials Reviewed

Michael D. Kempe, David C. Miller, John H. Wohlgemuth, Sarah R. Kurtz, John M. Moseley, Dylan l. Nobles, Katherine M. Stika, Yefim Brun, Sam L. Samuels, Qurat Annie Shah, Govindasamy Tamizhmani, Keiichiro Sakurai, Masanao Inoue, Takuya Doi, Atsushi Masuda, Crystal E. Vanderpan

Energy Science and Engineering   4 ( 1 )   40 - 51   2016.1

Proposed new damp heat test standards for commercial CIGS modules with bias application or light irradiation Reviewed

Keiichiro Sakurai, Hiroshi Tomita, Kinichi Ogawa, Darshan Schmitz, Hajime Shibata, Shuuji Tokuda, Atsushi Masuda

Proceedings of SPIE - The International Society for Optical Engineering   9938   2016

Direct Evidence for pn Junction without Degradation in Crystalline Si Photovoltaic Modules under Hygrothermal Stresses Reviewed

Atsushi Masuda, Chizuko Yamamoto, Tadanori Tanahashi, Hitoshi Sai, Takuya Matsui

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   904 - 906   2016

Electrical Detection of Gap Formation underneath Finger Electrodes on c-Si PV Cells Exposed to Acetic Acid Vapor under Hygrothermal Conditions Reviewed

Tadanori Tanahashi, Norihiko Sakamoto, Hajime Shibata, Atsushi Masuda

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   1075 - 1079   2016

Field testing of thermoplastic encapsulants in high-temperature installations Reviewed

Michael D. Kempe, David C. Miller, John H. Wohlgemuth, Sarah R. Kurtz, John M. Moseley, Qurat A. Shah, Govindasamy Tamizhmani, Keiichiro Sakurai, Masanao Inoue, Takuya Doi, Atsushi Masuda, Sam L. Samuels, Crystal E. Vanderpan

Energy Science and Engineering   3 ( 6 )   565 - 580   2015.11

Potential-induced degradation in photovoltaic modules based on n-type single crystalline Si solar cells Reviewed

Kohjiro Hara, Sachiko Jonai, Atsushi Masuda

SOLAR ENERGY MATERIALS AND SOLAR CELLS   140   361 - 365   2015.9

Acceleration of potential-induced degradation by salt-mist preconditioning in crystalline silicon photovoltaic modules Reviewed

Soh Suzuki, Naoki Nishiyama, Seiji Yoshino, Takumi Ujiro, Shin Watanabe, Takuya Doi, Atsushi Masuda, Tadanori Tanahashi

Japanese Journal of Applied Physics   54 ( 8 )   2015.8

Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

Ken Mishina, Atsufumi Ogishi, Kiyoshi Ueno, Sachiko Jonai, Norihiro Ikeno, Tetsuya Saruwatari, Kohjiro Hara, Atsushi Ogura, Toshiharu Yamazaki, Takuya Doi, Makoto Shinohara, Atsushi Masuda

Japanese Journal of Applied Physics   54 ( 8 )   2015.8

Development of a pH sensor based on a nanostructured filter adding pH-sensitive fluorescent dye for detecting acetic acid in photovoltaic modules Reviewed

Takashi Asaka, Tomohiro Itayama, Hideaki Nagasaki, Kentaro Iwami, Chizuko Yamamoto, Yukiko Hara, Atsushi Masuda, Norihiro Umeda

Japanese Journal of Applied Physics   54 ( 8 )   2015.8

Module composition for reliability test of organic photovoltaics Reviewed

Hideyuki Morita, Masanori Miyashita, Atsushi Masuda

Japanese Journal of Applied Physics   54 ( 8 )   2015.8

Relationship between cross-linking conditions of ethylene vinyl acetate and potential induced degradation for crystalline silicon photovoltaic modules Reviewed

Sachiko Jonai, Kohjiro Hara, Yuji Tsutsui, Hidenari Nakahama, Atsushi Masuda

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   2015.8

An examination of the acceleration method of damp heat test for c-Si PV modules Reviewed

Soh Suzuki, Tadanori Tanahashi, Takuya Doi, Atsushi Masuda

Journal of Japan Institute of Electronics Packaging   18 ( 4 )   226 - 234   2015.7

Potential-induced degradation of Cu(In,Ga)Se2 photovoltaic modules Reviewed

Seira Yamaguchi, Sachiko Jonai, Kohjiro Hara, Hironori Komaki, Yukiko Shimizu-Kamikawa, Hajime Shibata, Shigeru Niki, Yuji Kawakami, Atsushi Masuda

Jpn. J. Appl. Phys   54   2015.7

Degradation by acetic acid for crystalline Si photovoltaic modules Reviewed

Atsushi Masuda, Naomi Uchiyama, Yukiko Hara

Japanese Journal of Applied Physics   54 ( 4 )   2015.4

Crystalline Si photovoltaic modules functionalized by a thin polyethylene film against potential and damp-heat-induced degradation Reviewed

Kohjiro Hara, Sachiko Jonai, Atsushi Masuda

RSC Advances   5 ( 20 )   15017 - 15023   2015

Effects of light illumination during damp/dry heat tests on a flexible thin film photovoltaic module Reviewed

Keiichiro Sakurai, Akihiro Takano, Masayoshi Takani, Atsushi Masuda

Proceedings of SPIE - The International Society for Optical Engineering   9563   2015

Novel lighter weight crystalline silicon photovoltaic module using acrylic-film as a cover sheet Reviewed

Taira Kajisa, Haruko Miyauchi, Kazumi Mizuhara, Kentaro Hayashi, Tooru Tokimitsu, Masanao Inoue, Kohjiro Hara, Atsushi Masuda

JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 9 )   2014.9

Investigation on antireflection coating for high resistance to potential-induced degradation Reviewed

Ken Mishina, Atsufumi Ogishi, Kiyoshi Ueno, Takuya Doi, Kohjiro Hara, Norihiro Ikeno, Daisuke Imai, Tetsuya Saruwatari, Makoto Shinohara, Toshiharu Yamazaki, Atsushi Ogura, Yoshio Ohshita, Atsushi Masuda

JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 3 )   2014.3

Detection of acid moisture in photovoltaic modules using a dual wavelength pH-sensitive fluorescent dye Reviewed

Takashi Asaka, Kentaro Iwami, Atsushi Taguchi, Norihiro Umeda, Atsushi Masuda

Japanese Journal of Applied Physics   53 ( 4 )   2014

Crystalline Si photovoltaic modules based on TiO2-coated cover glass against potential-induced degradation Reviewed

Kohjiro Hara, Hiromichi Ichinose, Takurou N. Murakami, Atsushi Masuda

RSC ADVANCES   4 ( 83 )   44291 - 44295   2014

Estimating the manufacturing cost to large-scale power generate polymer based organic photovoltaics Reviewed

Hiroyuki Ogo, Masaru Nagai, Jiro Tsukahara, Masaki Konishi, Atsushi Masuda, Yuji Yoshida

Nihon Enerugi Gakkaishi/Journal of the Japan Institute of Energy   93 ( 3 )   271 - 277   2014

Microscopic degradation mechanisms in silicon photovoltaic module under long-term environmental exposure Reviewed

Keiko Matsuda, Takeshi Watanabe, Koichi Sakaguchi, Masanobu Yoshikawa, Takuya Doi, Atsushi Masuda

Japanese Journal of Applied Physics   51 ( 10 )   2012.10

Early failure detection of interconnection with rapid thermal cycling in photovoltaic modules Reviewed

Yuichi Aoki, Manabu Okamoto, Atsushi Masuda, Takuya Doi, Tadanori Tanahashi

Japanese Journal of Applied Physics   51 ( 10 )   2012.10

Failure assessments for outside-exposed photovoltaic modules Reviewed

Shigenori Shimizu, Takashi Arai, Tomohiko Sagawa, Yuichi Aoki, Takumi Hirakawa, Hiroshi Hiraike, Shiro Hamamoto, Sadao Sakamoto, Takuya Doi, Atsushi Masuda, Masaaki Yamamichi

Japanese Journal of Applied Physics   51 ( 10 )   2012.10

Measuring method of moisture ingress into photovoltaic modules Reviewed

Masanori Miyashita, Shinji Kawai, Atsushi Masuda

Japanese Journal of Applied Physics   51 ( 10 )   2012.10

Recent situation and future prospects of photovoltaic industries and technologies Reviewed

Atsushi Masuda

Journal of the Vacuum Society of Japan   55 ( 12 )   520 - 528   2012

A field evaluation of the potential for creep in thermoplastic encapsulant materials Reviewed

Michael D. Kempe, David C. Miller, John H. Wohlgemuth, Sarah R. Kurtz, John M. Moseley, Qurat Shah, Govindasamy Tamizhmani, Keiichiro Sakurai, Masanao Inoue, Takuya Doi, Atsushi Masuda, Sam L. Samuels, Crystal E. Vanderpan

Conference Record of the IEEE Photovoltaic Specialists Conference   1871 - 1876   2012

Recent Situation and Future Prospects of Photovoltaics

MASUDA Atsushi

GOMU   84 ( 5 )   153 - 160   2011.5

Development of high efficiency flexible solar cells - Management of "Flexible Solar Cell Substrates Consortium" and its achievements -:- Management of "Flexible Solar Cell Substrates Consortium" and its achievements -

MASUDA Atsushi

Synthesiology   4 ( 4 )   193 - 199   2011

Investigation on the crystal growth process of spherical Si single crystals by melting Reviewed

Zhengxin Liu, Atsushi Masuda, Michio Kondo

JOURNAL OF CRYSTAL GROWTH   311 ( 16 )   4116 - 4122   2009.8

Study on silicon-slicing technique using plasma-etching processing Reviewed

Mitsutaka Yamaguchi, Yoshinori Abe, Atsushi Masuda, Michio Kondo

SOLAR ENERGY MATERIALS AND SOLAR CELLS   93 ( 6-7 )   789 - 791   2009.6

Selective machining of organic thin film photovoltaic cell by a ultra-short pulse laser Reviewed

Yoshiro Ito, Daisuke Miyata, Rie Tanabe, Masahiro Ichihara, Yoshiko Abe, Eiichi Matsumoto, Tetsuya Taima, Yuji Yoshida, Atsushi Masuda

CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference   2009

Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique Reviewed

Takuya Yorimoto, Seiichiro Higashi, Hirotaka Kaku, Tatsuya Okada, Hideki Murakami, Seiichi Miyazaki, Takuya Matsui, Atsushi Masuda, Michio Kondo

JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 8 )   6949 - 6952   2008.8

Investigating minority-carrier lifetime in small spherical Si using microwave photoconductance decay Reviewed

Zhengxin Liu, Atsushi Masuda, Michio Kondo

JOURNAL OF APPLIED PHYSICS   103 ( 10 )   2008.5

Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 °C Reviewed

Akira Heya, Toshiharu Minamikawa, Toshikazu Niki, Shigehira Minami, Atsushi Masuda, Hironobu Umemoto, Naoto Matsuo, Hideki Matsumura

Thin Solid Films   516 ( 10 )   3000 - 3004   2008.3

Improvement of the uniformity in electronic properties of AZO films using an rf magnetron sputtering with a mesh grid electrode Reviewed

Kanji Yasui, Akira Asano, Miku Otsuji, Hironori Katagiri, Atsushi Masuda, Hiroshi Nishiyama, Yasunobu Inoue, Masasuke Takata, Tadashi Akahane

Materials Science and Engineering B: Solid-State Materials for Advanced Technology   148 ( 1-3 )   26 - 29   2008.2

Epitaxial growth of SiC on silicon on insulator substrates with ultrathin top Si layer by hot-mesh chemical vapor deposition Reviewed

Hitoshi Miura, Kanji Yasui, Kazuki Abe, Atsushi Masuda, Yuichiro Kuroki, Hiroshi Nishiyama, Masasuke Takata, Yasunobu Indue, Tadashi Akahane

Japanese Journal of Applied Physics   47 ( 1 )   569 - 572   2008.1

Cat-CVD SiN passivation films for OLEDs and packaging Reviewed

Akira Heya, Toshiharu Minamikawa, Toshikazu Niki, Shigehira Minami, Atsushi Masuda, Hironobu Umemoto, Naoto Matsuo, Hideki Matsumura

Thin Solid Films   516 ( 5 )   553 - 557   2008.1

Estimation of moisture barrier ability of thin SiNx single layer on polymer substrates prepared by Cat-CVD method Reviewed

K. Saitoh, R. S. Kumar, S. Chua, A. Masuda, H. Matsumura

THIN SOLID FILMS   516 ( 5 )   607 - 610   2008.1

Properties of Surface-Modification Layer Generated by Atomic Hydrogen Annealing on Poly(ethylene naphthalate) Substrate Reviewed

A. Heya, T. Minamikawa, T. Niki, S. Minami, A. Masuda, H. Umemoto, N. Matsuo, H. Matsumura

Jpn. J. Appl. Phys.   47   266 - 268   2008

A concentrator module of spherical Si solar cell Reviewed

Zhengxin Liu, Atsushi Masuda, Takehiko Nagai, Takashi Miyazaki, Miwako Takano, Masahiro Takano, Haruyuki Yoshigahara, Kazutoshi Sakai, Koichi Asai, Michio Kondo

SOLAR ENERGY MATERIALS AND SOLAR CELLS   91 ( 19 )   1805 - 1810   2007.11

Improvement of the production yield of spherical si by optimization of the seeding technique in the dropping method Reviewed

Zhengxin Liu, Koichi Asai, Atsushi Masuda, Takehiko Nagai, Yoshihiro Akashi, Mikio Murozono, Michio Kondo

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 9A )   5695 - 5700   2007.9

Characterization of spherical Si by photoluminescence measurement Reviewed

Takehiko Nagai, Zhengxin Liu, Atsushi Masuda, Michio Kondo

JOURNAL OF APPLIED PHYSICS   101 ( 10 )   5   2007.5

Seeding method with silicon powder for the formation of silicon spheres in the drop method Reviewed

Zhengxin Liu, Takehiko Nagai, Atsushi Masuda, Michio Kondo, Kazutoshi Sakai, Koichi Asai

JOURNAL OF APPLIED PHYSICS   101 ( 9 )   2007.5

Defect reduction in polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor Reviewed

Toshiyuki Sameshima, Hiromi Hayasaka, Masato Maki, Atsushi Masuda, Takuya Matsui, Michio Kondo

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 3B )   1286 - 1289   2007.3

Systematic study on photoresist removal using hydrogen atoms generated on heated catalyzer Reviewed

Kouhei Hashimoto, Atsushi Masuda, Hideki Matsumura, Tomoatsu Ishibashi, Kazuhisa Takao

Thin Solid Films   501 ( 1-2 )   326 - 328   2006.4

Formation of highly moisture-resistive SiNx films on Si substrate by Cat-CVD at room temperature Reviewed

Toshiharu Minamikawa, Akira Heya, Toshikazu Niki, Masahiro Takano, Yasuto Yonezawa, Susumu Muroi, Shigehira Minami, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura

Thin Solid Films   501 ( 1-2 )   154 - 156   2006.4

High-rate deposition of SiNx films over 100 nm/min by Cat-CVD method at low temperatures below 80 °C Reviewed

Tetsuo Osono, Akira Heya, Toshikazu Niki, Masahiro Takano, Toshiharu Minamikawa, Susumu Muroi, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura

Thin Solid Films   501 ( 1-2 )   55 - 57   2006.4

Grain enlargement of polycrystalline silicon by multipulse excimer laser annealing: Role of hydrogen Reviewed

Naoya Kawamoto, Atsushi Masuda, Naoto Matsuo, Yasuhiro Seri, Toshimasa Nishimori, Yoshitaka Kitamon, Hideki Matsumura, Hiroki Hamada, Tadaki Miyoshi

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 4 A )   2726 - 2730   2006.4

Preparation of SiNx gate-insulating films for bottom-gate type TFTs by Cat-CVD method Reviewed

Y Seri, A Masuda, H Matsumura

THIN SOLID FILMS   501 ( 1-2 )   307 - 309   2006.4

Present status and future feasibility for industrial implementation of Cat-CVD (Hot-Wire CVD) technology Reviewed

H Matsumura, A Masuda, H Untemoto

THIN SOLID FILMS   501 ( 1-2 )   58 - 60   2006.4

Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films Reviewed

A Masuda, H Umemoto, H Matsumura

THIN SOLID FILMS   501 ( 1-2 )   149 - 153   2006.4

H-2 dilution effect in the Cat-CVD processes of the SiH4/NH3 system Reviewed

SG Ansari, H Umemoto, T Morimoto, K Yoneyama, A Izumi, A Masuda, H Matsumura

THIN SOLID FILMS   501 ( 1-2 )   31 - 34   2006.4

Relation between pin a-Si : H solar-cell perfon-nances and intrinsic-layer properties prepared by Cat-CVD Reviewed

T Kitamura, K Honda, M Nishimura, K Sugita, K Takemoto, Y Yamaguchi, Y Toyama, T Yamamoto, S Miyazaki, M Eguchi, T Harano, T Sugano, N Yoshida, A Masuda, T Itoh, T Toyama, S Nonomura, H Okamoto, H Matsumura

THIN SOLID FILMS   501 ( 1-2 )   264 - 267   2006.4

Improvement of crystallinity and solar cell efficiency of spherical silicon by seeding crystallization techniques Reviewed

Zhengxin Liu, Atsushi Masuda, Kazutoshi Sakai, Koichi Asai, Michio Kondo

CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2   1238 - 1241   2006

Air-stable n-type carbon nanotube field-effect transistors with Si 3N4 passivation films fabricated by catalytic chemical vapor deposition Reviewed

Daisuke Kaminishi, Hirokazu Ozaki, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto, Yasuhiro Seri, Atsushi Masuda, Hideki Matsumura

Applied Physics Letters   86 ( 11 )   1 - 3   2005.3

Low-temperature Formation of Gas-barrier Films by Catalytic Chemical Vapor Deposition

MASUDA Atsushi, NIKI Toshikazu, HEYA Akira, MINAMIKAWA Toshiharu, UMEMOTO Hironobu, MATSUMURA Hideki

Ceramics Japan   40 ( 2 )   82 - 87   2005.2

Quantification of gas-phase H-atom number density by tungsten phosphate glass Reviewed

T Morimoto, H Umemoto, K Yoneyama, A Masuda, H Matsumura, K Ishibashi, H Tawarayama, H Kawazoe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 1B )   732 - 735   2005.1

Contamination removal from EUV multilayer using atomic hydrogen generated by heated catalyzer Reviewed

H. Oizumi, H. Yamanashi, I. Nishiyama, K. Hashimoto, S. Ohsono, A. Masuda, A. Izumi, H. Matsumura

Progress in Biomedical Optics and Imaging - Proceedings of SPIE   5751 ( II )   1147 - 1154   2005

Effect of atomic hydrogen on preparation of highly moisture-resistive SiNx films at low substrate temperatures Reviewed

Akira Heya, Toshikazu Niki, Masahiro Takano, Yasuto Yonezawa, Toshiharu Minamikawa, Susumu Muroi, Shigehira Minami, Akira Izumi, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura

Japanese Journal of Applied Physics, Part 2: Letters   43 ( 12 A )   L1546 - L1548   2004.12

Highly moisture-resistive SiNx films prepared by catalytic chemical vapor deposition Reviewed

Akira Heya, Toshikazu Niki, Yasuto Yonezawa, Toshiharu Minamikawa, Susumu Muroi, Akira Izumi, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura

Japanese Journal of Applied Physics, Part 2: Letters   43 ( 10 B )   L1362 - L1364   2004.10

Correlation between O/Er content ratio and photoluminescence intensity of (Er, O)-doped hydrogenated amorphous Si thin films prepared by a catalytic chemical vapor deposition/laser ablation hybrid process Reviewed

Joe Sakai, Atsushi Masuda, Haruo Akiyama, Osamu Eryu, Kenshiro Nakashima, Hideki Matsumura

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   43 ( 7 A )   4198 - 4201   2004.7

Study on change in SIMS intensities near the interface between silicon-nitride film and silicon substrate Reviewed

Takahiro Hasegawa, Tomotsugu Date, Akiya Karen, Atsushi Masuda

Applied Surface Science   231-232   725 - 728   2004.6

Catalytic decomposition of HCN on heated W surfaces to produce CN radicals Reviewed

H Umemoto, T Morimoto, M Yamawaki, Y Masuda, A Masuda, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS   338   65 - 69   2004.6

Highly moisture-resistive silicon nitride films prepared by catalytic chemical vapor deposition and application to gallium arsenide field-effect transistors Reviewed

A Masuda, M Totsuka, T Oku, R Hattori, H Matsumura

VACUUM   74 ( 3-4 )   525 - 529   2004.6

Cat-CVD (hot-wire CVD): how different from PECVD in preparing amorphous silicon Reviewed

H Matsumura, H Umemoto, A Masuda

JOURNAL OF NON-CRYSTALLINE SOLIDS   338   19 - 26   2004.6

Preparation of wide gap and low resistive hetero-structured SiCx films as wide gap window of solar cells Reviewed

T Itoh, Y Hasegawa, T Fujiwara, A Masuda, S Nonomura

JOURNAL OF NON-CRYSTALLINE SOLIDS   338   123 - 126   2004.6

Nitridation of ultrathin SiO2 layers in metal-ferroelectric- insulator-semiconductor structures Reviewed

Masakazu Hirakawa, Gen Hirooka, Minoru Noda, Masanori Okuyama, Kazuhiro Honda, Atsushi Masuda, Hideki Matsumura

Integrated Ferroelectrics   68   29 - 36   2004

Effect of H2 dilution in the catalytic CVD processes of SiH4/NH3 system Reviewed

Takashi Morimoto, Shafeeque A.A.G. Ansari, Koji Yoneyama, Hironobu Umemoto, Atsushi Masuda, Hideki Matsumura

IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai   97 - 98   2004

Control of stress in SiN_x films on Si substrate prepared by Cat-CVD method

TAKANO Masahiro, HEYA Akira, NIKI Toshikazu, YONEZAWA Yasuto, MINAMIKAWA Toshiharu, MUROI Atsushi, MASUDA Atsushi, UMEMOTO Hironobu, MATSUMURA Hideki

The proceedings of the JSME annual meeting   2004   387 - 388   2004

Radical species formed by the catalytic decomposition of NH3 on heated W surfaces Reviewed

H Umemoto, K Ohara, D Morita, T Morimoto, M Yamawaki, A Masuda, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 8 )   5315 - 5321   2003.8

Catalytic Chemical Vapor Deposition: Recent Development and Future Prospects Reviewed

Atsushi Masuda, Akira Izumi, Hironobu Umemoto, Hideki Matsumura

Shinku/Journal of the Vacuum Society of Japan   46 ( 2 )   92 - 97   2003

Preferential In-N bond formation in InGaAsN layers Reviewed

M Uchida, A Masuda, A Yamamoto, A Hashimoto

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS   0 ( 7 )   2745 - 2748   2003

Preferential In-N bond formation in InGaAsN layers Reviewed

M. Uchida, A. Masuda, A. Yamamoto, A. Hashimoto

Physica Status Solidi C: Conferences   ( 7 )   2745 - 2748   2003

Optical properties of RF-MBE grown AlGaAsN Reviewed

K. Yamamoto, M. Uchida, A. Yamamoto, A. Masuda, A. Hashimoto

Physica Status Solidi (B) Basic Research   234 ( 3 )   915 - 918   2002.12

Oxidation process in pulsed laser ablation of Si with various ambients Reviewed

A Masuda, S Usui, Y Yamanaka, Y Yonezawa, T Minamikawa, M Suzuki, A Morimoto, M Kumeda, T Shimizu

THIN SOLID FILMS   416 ( 1-2 )   106 - 113   2002.9

Preparation of Amorphous Silicon Films and Device Application by Catalytic Chemical Vapor Deposition Method Reviewed

Atsushi Masuda, Hideki Matsumura

Shinku/Journal of the Vacuum Society of Japan   45 ( 10 )   727 - 732   2002

Recent progress in industrial applications of Cat-CVD (hot-wire CVD) Reviewed

A Masuda, A Izumi, H Umemoto, H Matsumura

AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002   715   111 - 122   2002

Cat-CVD as a new fabrication technology of semiconductor devices Reviewed

H Matsumura, A Izumi, A Masuda

COMMAD 2002 PROCEEDINGS   323 - 328   2002

RF-MBE growth and Raman scattering characterization of lattice-matched GaInNAs on GaAs(001) substrates Reviewed

A Hashimoto, T Furuhata, T Kitano, AK Nguyen, A Masuda, A Yamamoto

JOURNAL OF CRYSTAL GROWTH   227   532 - 535   2001.7

An indium surfactant effect in cubic GaN Rf-MBE growth Reviewed

Y Nishio, H Mori, A Masuda, A Yamamoto, A Hashimoto

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS   1   178 - 181   2000

Effects of active ammonia gas cracked in catalytic-CVD on PZT ferroelectric capacitors Reviewed

T Minamikawa, Y Yonezawa, Y Fujimori, T Nakamura, A Masuda, H Matsumura

FERROELECTRIC THIN FILMS VIII   596   271 - 275   2000

Cat-CVD process and its application to preparation of Si-based thin films Reviewed

H Matsumura, A Masuda, A Izumi

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999   557   67 - 78   1999

Structural studies on hydrogenated amorphous germanium-carbon films prepared by RF sputtering Reviewed

M Kumeda, A Masuda, T Shimizu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   37 ( 4A )   1754 - 1759   1998.4

Low-temperature nitridation of Si surface using gas-decomposition reaction in cat-CVD method Reviewed

A Izumi, A Masuda, H Matsumura

PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON THIN FILM MATERIALS, PROCESSES, RELIABILITY, AND APPLICATIONS: THIN FILM PROCESSES   97 ( 30 )   277 - 282   1998

Novel surface cleaning of GaAs and formation of high quality SiNx films by cat-CVD method Reviewed

A Izumi, A Masuda, S Okada, H Matsumura

COMPOUND SEMICONDUCTORS 1996   ( 155 )   343 - 346   1997

X-ray photoelectron spectroscopy of GaN layer formed on GaAs by NH3-plasma nitridation and successive excimer-laser irradiation Reviewed

A Masuda, Y Yonezawa, A Morimoto, T Shimizu

SILICON CARBIDE AND RELATED MATERIALS 1995   142   1039 - 1042   1996

Raman scattering characterization of annealed GaN_x As_1-x layers

Proceedings of International Workshop on Nitride Semiconductors, IPAP Conference Series  2000 

Effects of active ammonia gas cracked in catalytic-CVD on PZT ferroelectivic capacitors

Ferroelectric Thin Films (]G0008[), Matevials Research Society Symposium Proceedings  2000 

Gas-phase and surface reactions of decomposed species in catalytic CVD

Amorphous and Heterogeneous Silicon Thin Films-2000, Materials Research Society Symposium Proceedings  2000 

Drastic revolution in catalytic CVD using"catalytic plate"instead of "hot wire"

Amorphous and Heterogeneous Silicon Thin Films-2000, Materials Research Society Symposium Proceedings  2000 

Cat-CVD process and its application to preparation of Si-based thin films

Amorphous and Heterogeneous Silicon Thin Films : Fundamentals to Devices-1999, Materials Research Society Symposium Proceedings  1999 

Low temperature nitridation of Si surface using gas-decomposition reaction in cat-CVD method

Proceedings of the International Symposium on Thin Film Materials, Precesses, Reliability, and Applications(The Electrochemical Society, Inc. , Pennington)  1998 

Novel surface cleaning of GaAs and formation of high quality SiNx films by cat-CVD method

Institute of Physics Conference Series(Institute of Physics Publishing, Bristol)  1997 

X-ray photoelectron spectroscopy of GaN layer formed on GaAs by NH₃-plasma nitridation and successive excimer-laser irradiation

Institute of Physics Conference Series(Institute of Physics Publishing, Bristol)  1996 

CS-3-2 Recent Situation and Future Prospects of Photovoltaic Markets and Technologies

Masuda Atsushi

Proceedings of the Society Conference of IEICE   2009 ( 2 )   "S - 3"-"S-4"   2009.9

Flexible thin-film solar cells

MASUDA Atsushi

77 ( 10 )   1213 - 1219   2008.10

Novel type Solar Cells

MASUDA Atsushi

Ceramics Japan   43 ( 1 )   62 - 67   2008.1

Mass-spectrometric studies of catalytic chemical vapor deposition processes of organic silicon compounds containing nitrogen

T Morimoto, SG Ansari, K Yoneyama, T Nakajima, A Masuda, H Matsumura, M Nakamura, H Umemoto

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 2A )   961 - 966   2006.2

Low-temperature deposition of silicon nitride films by a cat-CVD technique - Gas-phase diagnoses and evaluation of film properties -

Hironobu Umemoto, Atsushi Masuda, Hideki Matsumura, Toshiharu Minamikawa, Akira Hhya, Masahiro Takano, Yasuto Yonezawa, Toshikazu Niki, Susumu Muroi, Shigehira Minami

Zairyo/Journal of the Society of Materials Science, Japan   55 ( 2 )   142 - 147   2006.2

Development of Catalytic Chemical Vapor Deposition Systems for Flexible Organic Light-Emitting Diode Displays

部家彰, 高野昌宏, 米沢保人, 南川俊治, 仁木敏一, 室井進, 南茂平, 大薗哲郎, 増田淳, 梅本宏信, 松村英樹

石川県工業試験場研究報告   ( 54 )   17 - 22   2005.12

Technique for the production, preservation, and transportation of H atoms in metal chambers for processings

SG Ansari, H Umemoto, T Morimoto, K Yoneyama, A Masuda, H Matsumura, M Ikemoto, K Ishibashi

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   23 ( 6 )   1728 - 1731   2005.11

CS-5-7 Properties and device applications of SiNx films prepared by Cat-CVD

Masuda Atsushi, Umemoto Hironobu, Matsumura Hideki

Proceedings of the Society Conference of IEICE   2005 ( 2 )   "S - 13"-"S-14"   2005.9

ELと光学技術 Cat‐CVD法による水蒸気バリア薄膜の低温形成

南川俊治, 部家彰, 高野昌宏, 米沢保人, 仁木敏一, 南茂平, 増田淳, 梅本宏信, 松村英樹

光技術コンタクト   43 ( 6 )   328 - 333   2005.6

Preparation of low-stress SiNx films by catalytic chemical vapor deposition at low temperatures

M Takano, T Niki, A Heya, T Osono, Y Yonezawa, T Minamikawa, S Muroi, S Minami, A Masuda, H Umemoto, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 6A )   4098 - 4102   2005.6

Improvement of deposition rate by sandblasting of tungsten wire in catalytic chemical vapor deposition

A Heya, T Niki, M Takano, Y Doguchi, Y Yonezawa, T Minamikawa, S Muroi, S Minami, A Izumi, A Masuda, H Umemoto, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 4A )   1943 - 1944   2005.4

Moisture-resistive properties of SiNx films prepared by catalytic chemical vapor deposition below 100 degrees C for flexible organic light-emitting diode displays

A Heya, T Niki, M Takano, Y Yonezawa, T Minamikawa, S Muroi, S Minami, T Ikari, A Izumi, A Masuda, H Umemoto, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 4A )   1923 - 1927   2005.4

Cat-CVD法の包装用ガスバリアフィルム製造工程への適用 (特集 マーケット創出の成否を決する次世代パッケージング) -- (未来のマーケットを支える技術と商品開発)

増田 淳, 梅本 宏信, 松村 英樹

パックピア   49 ( 1 )   34 - 39   2005.1

有機ELディスプレイ用水蒸気バリア膜の形成 -低温触媒CVD装置の開発-

電子情報通信学会技術研究報告   105 ( 434 )   7 - 12   2005

Enlargement of ELA poly-Si film : Relationship between Crystal Growth and Hydrogen

KAWAMOTO N., MASUDA A., MATSUO N., SERI Y., MATSUMURA H., HAMADA H., MIYOSHI T.

Technical report of IEICE. SDM   104 ( 510 )   47 - 51   2004.12

Resist-removal technique without plasma using hydrogen atoms generated on heated catalyzer

MASUDA Atsushi, HASHIMOTO Kouhei, TAKAO Kazuhisa, IHSIBASHI Tomoatsu, MATSUMURA Hideki

IEICE technical report. Component parts and materials   104 ( 425 )   39 - 43   2004.11

Application of SiN_x films prepared by Cat-CVD method to GaAs-based transistors

MASUDA Atsushi, TOTSUKA Masahiro, OKU Tomoki, HATTORI Ryo, MATSUMURA Hideki

IEICE technical report. Electron devices   104 ( 111 )   11 - 16   2004.6

研究室へようこそ 北陸先端科学技術大学院大学(JAIST)・材料科学研究科 松村研究室 Cat-CVD法のフラットパネルディスプレイ製造技術への新展開

増田 淳, 松村 英樹

ディスプレイ   10 ( 4 )   71 - 74   2004.4

Present Status and Future Prospects of Cat-CVD Technique : Gas-Phase Diagnostics and Device Applications

MASUDA Atsushi, UMEMOTO Hironobu, MATSUMURA Hideki

The Transactions of the Institute of Electronics, Information and Communication Engineers C   87 ( 2 )   203 - 215   2004.2

Fabrication of Amorphous Silicon Solar Cells by Catalytic Chemical Vapor Deposition

MASUDA Atsushi, NISHIMURA Masaya, KATOUNO Kouichi, SUGITA Ken, IMAMORI Kensaku, ITOH Masaya, MATSUMURA Hideki

IEICE technical report. Component parts and materials   103 ( 412 )   1 - 6   2003.11

低温触媒CVD装置の開発 (特集/新規事業創出と大学発ベンチャー)

増田 淳, 松村 英樹, 南川 俊治

化学工業   54 ( 8 )   631 - 635   2003.8

Behavior of Hydrogens in the poly-Si Film Prepaired by ELA Method : Relationship Between the Concentration of the Hydrogen Molecule in the SiN Film and Crystal growth

KAWAMOTO N, MASUDA A, HASEGAWA I, ANWAR BIN ABD, AZIZ Fakhrul, YOGORO Y, MATSUO N, YAMANO K, MATSUMURA H, HAMADA H, SHIBATA K

Technical report of IEICE. OME   103 ( 8 )   31 - 34   2003.4

Characteristics of Laser Annealing for Amorphous Si Films Prepared by Catalytic Chemical Vapor Deposition and Application to Fabrication of Polycrystalline Si Thin-Film Transistors

MASUDA Atsushi, YOGORO Yusuke, MATSUMURA Hideki, MIYASHITA Kazuyuki, SHIMODA Tatsuya

Technical report of IEICE. OME   103 ( 8 )   25 - 30   2003.4

Recent Development of Fabrication Techniques for Thin-Film Transistors by Catalytic Chemical Vapor Deposition

MASUDA Atsushi, MATSUMURA Hideki

IEICE technical report. Component parts and materials   102 ( 434 )   71 - 76   2002.11

In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si : H solar cells

A Masuda, Y Ishibashi, K Uchida, K Kamesaki, A Izumi, H Matsumura

SOLAR ENERGY MATERIALS AND SOLAR CELLS   74 ( 1-4 )   373 - 377   2002.10

What is the difference between catalytic CVD and plasma-enhanced CVD? - Gas-phase kinetics and film properties

A Masuda, A Izumi, H Umemoto, H Matsumura

VACUUM   66 ( 3-4 )   293 - 297   2002.8

Preparation of boron-carbon-nitrogen thin films by magnetron sputtering

H Yokomichi, T Funakawa, A Masuda

VACUUM   66 ( 3-4 )   245 - 249   2002.8

Influence of atomic hydrogen on transparent conducting oxides during hydrogenated amorphous and microcrystalline Si preparation by catalytic chemical vapor deposition

A Masuda, K Imamori, H Matsumura

THIN SOLID FILMS   411 ( 1 )   166 - 170   2002.5

Photoinduced volume expansion and contraction in a-Si : H films

N Yoshida, Y Sobajima, H Kamiguchi, T Iida, T Hatano, H Mori, Y Nakae, M Itoh, A Masuda, H Matsumura, S Nonomura

JOURNAL OF NON-CRYSTALLINE SOLIDS   299   516 - 520   2002.4

Effects of atomic hydrogen in gas phase on a-Si : H and poly-Si growth by catalytic CVD

H Umemoto, Y Nozaki, M Kitazoe, K Horii, K Ohara, D Morita, K Uchida, Y Ishibashi, M Komoda, K Kamesaki, A Izumi, A Masuda, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS   299   9 - 13   2002.4

Low-Temperature Fabrication and Characteristics of Poly-Si TFTs by Cat-CVD

Matsumura Hideki, Masuda Atsushi, Izumi Akira

Proceedings of the IEICE General Conference   2002 ( 2 )   171 - 172   2002.3

Low-resistivity phosphorus-doped polycrystalline silicon thin films formed by catalytic chemical vapor deposition and successive rapid thermal annealing

R Morimoto, A Izumi, A Masuda, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 2A )   501 - 506   2002.2

Direct detection of H atoms in the catalytic chemical vapor deposition of the SiH4/H-2 system

H Umemoto, K Ohara, D Morita, Y Nozaki, A Masuda, H Matsumura

JOURNAL OF APPLIED PHYSICS   91 ( 3 )   1650 - 1656   2002.2

Cat-CVD法による低温poly-Si TFT製造技術

月刊ディスプレイ   8 ( 7 )   10 - 15   2002

Application of catalytic chemical vapor deposition to fabrication of next-generation large-area displays

MASUDA Atsushi, MATSUMURA Hideki

OYOBUTURI   71 ( 7 )   833 - 838   2002

Development of large-area uniform deposition technique on 1-m-size substrate by catalytic chemical vapor deposition

Minoru Karasawa, Masahiro Sakai, Keiji Ishibashi, Masahiko Tanaka, Atsushi Masuda, Hideki Matsumura

Shinku/Journal of the Vacuum Society of Japan   45 ( 3 )   123 - 126   2002

Cat-CVD technology as a new tool for fabrication of large area display

Proceedings of 2nd International Display Manufacturing Conference   143-146   2002

Recent progress of Cat-CVD research in Japan -Bridging between the first and second Cat-CVD conferences-

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process   17-22   2002

Cat-CVD法による微結晶シリコン膜の作製とデバイス応用

固体物理   37 ( 12 )   1003 - 1009   2002

Deposition chemistry in the Cat-CVD processes of the SiH₄/NH₃ system

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process   35-38   2002

Development of Cat-CVD apparatus for 1-m-size large-area deposition

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process   75-80   2002

Key factors to improve efficiency of Cat-CVD a-Si solar cells

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process   223-226   2002

Coverage properties of silicon nitride film prepared by Cat-CVD method

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process   235-238   2002

Fabrication of a-Si_1-xC_x:H thin films for solar cells by Cat-CVD method using carbon catalyzer

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process   239-242   2002

Crystallization by excimer laser annealing for a-Si:H films with low hydrogen content prepared by Cat-CVD

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process   355-358   2002

Development of chamber cleaning reducing both cost and environmental pollution by using catalytic cracking reaction of NF_3

NISHIMURA Satoru, MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Component parts and materials   101 ( 395 )   61 - 65   2001.10

Influence of a-Si:H deposition by catalytic CVD on transparent conducting oxides

Kensaku Imamori, Atsushi Masuda, Hideki Matsumura

Thin Solid Films   395 ( 1-2 )   147 - 151   2001.9

Photo-induced volume changes in a-Si : H films prepared by Cat-CVD method

T Hatano, Y Nakae, H Mori, K Ohkado, N Yoshida, S Nonomura, M Itoh, A Masuda, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   84 - 86   2001.9

Guiding principles for device-grade hydrogenated amorphous silicon films and design of catalytic chemical vapor deposition apparatus

A Masuda, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   112 - 115   2001.9

High-stability hydrogenated amorphous silicon films for light-soaking prepared by catalytic CVD at high deposition rates

M Itoh, Y Ishibashi, A Masuda, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   138 - 141   2001.9

Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH4

Y Nozaki, M Kitazoe, K Horii, H Umemoto, A Masuda, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   47 - 50   2001.9

Development of Cat-CVD apparatus - a method to control wafer temperatures under thermal influence of heated catalyzer

M Karasawa, A Masuda, K Ishibashi, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   71 - 74   2001.9

High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

M Sakai, T Tsutsumi, T Yoshioka, A Masuda, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   330 - 334   2001.9

Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly-Si

K Kamesaki, A Masuda, A Izumi, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   169 - 172   2001.9

Formation of silicon films for solar cells by the Cat-CVD method

M Komoda, K Kamesaki, A Masuda, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   198 - 201   2001.9

Fabrication of amorphous carbon nitride films by hot-wire chemical vapor deposition

H Yokomichi, A Masuda, N Kishimoto

THIN SOLID FILMS   395 ( 1-2 )   249 - 252   2001.9

A Cat-CVD Si3N4 film study and its application to the ULSI process

Y Uchiyama, A Masuda, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   275 - 279   2001.9

Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature

H Sato, A Izumi, A Masuda, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   280 - 283   2001.9

Preparation of SiNx passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD

T Minamikawa, Y Yonezawa, A Heya, Y Fujimori, T Nakamura, A Masuda, H Matsumura

THIN SOLID FILMS   395 ( 1-2 )   284 - 287   2001.9

Thin-Film Transistors Fabricated by Catalytic Chemical Vapor Deposition Method

SAKAI Masahiro, TSUTSUMI Takayuki, MASUDA Atsushi, MATSUMURA Hideki

IEICE technical report. Electron devices   101 ( 14 )   27 - 31   2001.4

Catalytic chemical sputtering: A novel method for obtaining large-grain polycrystalline silicon

H Matsumura, K Kamesaki, A Masuda, A Izumi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 3B )   L289 - L291   2001.3

Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition

A Masuda, C Niikura, Y Ishibashi, H Matsumura

SOLAR ENERGY MATERIALS AND SOLAR CELLS   66 ( 1-4 )   259 - 265   2001.2

Raman characterization of lattice-matched GaInAsN layers grown on GaAs (001) substrates

Technical Digest of 12th International Photovoltaic Science and Engineering Conference   665-666   2001

What is the difference between catalytic CVD and plasma-enhanced CVD? -Gas-phase kinetics and film properties

Proceedings of 6th International Symposium on Sputtering & Plasma Processes   213-216   2001

Preparation of boron-carbon-nitrogen thin films by magnetron sputtering

Proceedings of 6th International Symposium on Sputtering & Plasma Processes   402-405   2001

Properties of thin-film transistors using amorphous silicon films prepared by catalytic CVD with high deposition rate

Digest of Technical Papers 8th International Workshop on Active-Matrix Liquid-Crystal Displays -TFT Technologies and Related Materials-   147-150   2001

In-situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells

Technical Digest of 12th International Photovoltaic Science and Engineering Conference   241-242   2001

Study on catalytic-CVD a-Si:H-based solar cells with high deposition rate

Technical Digest of 12th International Photovoltaic Science and Engineering Conference   243-244   2001

1 m size large-area deposition of a-Si:H films by catalytic CVD using novel showerhead equipped with catalyzers

Proceedings of 21st International Display Research Conference in conjunction with 8th International Display Workshops   1735-1736   2001

Properties of phosphorus-doped polycrystalline silicon films formed by catalytic chemical vapor deposition and successive rapid thermal annealing

Proceedings of 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices   39-40   2001

Precise substrate temperature control to prepare SiN_x films for PZT ferroelectric devices by catalytic chemical vapor deposition

Extended Abstracts of 1st International Meeting on Ferroelectric Random Access Memories   130-131   2001

Effects of double bonding configurations on thermal stability of low-hydrogen concentration fluorinated amorphous carbon thin-films with low dielectric constant prepared by sputtering with hydrogen dilution

H Yokomichi, A Masuda

VACUUM   59 ( 2-3 )   771 - 776   2000.11

Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy

Y Nozaki, K Kongo, T Miyazaki, M Kitazoe, K Horii, H Umemoto, A Masuda, H Matsumura

JOURNAL OF APPLIED PHYSICS   88 ( 9 )   5437 - 5443   2000.11

Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition: application to preparation of Er-doped hydrogenated amorphous Si films

A Masuda, J Sakai, H Matsumura

VACUUM   59 ( 2-3 )   635 - 640   2000.11

Proposal of chemical sputtering method and its application to prepare large grain size poly-Si films

KAMESAKI Koji, MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Component parts and materials   100 ( 396 )   7 - 12   2000.10

Control of polycrystalline silicon structure by the two-step deposition method

A Heya, A Izumi, A Masuda, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 7A )   3888 - 3895   2000.7

Effects of nitrogen incorporation on structural properties of fluorinated amorphous carbon films

H Yokomichi, A Masuda

JOURNAL OF NON-CRYSTALLINE SOLIDS   271 ( 1-2 )   147 - 151   2000.6

Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal

A Heya, A Masuda, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS   266 ( Pt.A )   619 - 623   2000.5

Transport mechanism of deposition precursors in catalytic chemical vapor deposition studied using a reactor tube

N Honda, A Masuda, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS   266 ( Pt.A )   100 - 104   2000.5

Novel deposition technique of Er-doped a-Si : H combining catalytic chemical vapor deposition and pulsed laser-ablation

A Masuda, J Sakai, H Akiyama, O Eryu, K Nakashima, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS   266 ( Pt.A )   136 - 140   2000.5

Low-temperature preparation of poly-Si films by catalytic CVD and application to TFTs

MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Electron devices   100 ( 1 )   13 - 18   2000.4

Luminescence Properties of Er-Doped a-Si:H Films Prepared by Cat-CVD Combined with Pulsed Laser Ablation

MASUDA Atsushi, SAKAI Joe, AKIYAMA Haruo, ERYU Osamu, NAKASHIMA Kenshiro, MATSUMURA Hideki

2000 ( 10 )   31 - 35   2000.2

High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   311 - 314   2000

Development of Cat-CVD apparatus-A method to control wafer temperatures under thermal influence of heated catalyzer

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   117 - 120   2000

High stability amorphous silicon films for light soaking prepared by catalytic CVD with high deposition rate

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   143 - 146   2000

Influence of a-Si : H deposition by catalytic CVD on transparent conducting oxides

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   147 - 150   2000

Formation of silicon films for solar cells by Cat-CVD method

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   163 - 166   2000

Fabrication of amorphous carbon nitride films by hot wire chemical vapor deposition

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   205 - 208   2000

Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH₄

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   41 - 44   2000

Photoinduced volume change in a-Si : H films prepared by Cat-CVD method

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   69 - 72   2000

Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly-Si

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   85 - 88   2000

Guiding principles for obtaining device-grade hydrogenated amorphous silicon films by catalytic chemical vapor deposition

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   99 - 102   2000

Effect of atomic H and chamber cleaning in catalytic CVD on reproducibility of a-Si : H film properties

Digest of Technical Papers 2000 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials-   219 - 222   2000

Study on Cat-CVD Si₃N₄ films and its application to ULSI process

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   241 - 244   2000

Low-k silicon nitride film for copper interconnects process prepared by Cat-CVD method at low temperature

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   245 - 248   2000

Preparation of SiN_x passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process   253 - 256   2000

Mixing mechanism of h-GaN in c-GaN growth on GaAs (001) substrates

A Hashimoto, H Wada, T Ueda, Y Nishio, A Masuda, A Yamamoto

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   176 ( 1 )   519 - 524   1999.11

Annealing effect of Pb(Zr, Ti)O-3 ferroelectric capacitor in active ammonia gas cracked by catalytic chemical vapor deposition system

T Minamikawa, Y Yonezawa, T Nakamura, Y Fujimori, A Masuda, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 9B )   5358 - 5360   1999.9

Effect of sputtering with hydrogen dilution on fluorine concentration of low hydrogen content fluorinated amorphous carbon thin films with low dielectric constant

H Yokomichi, A Masuda

JOURNAL OF APPLIED PHYSICS   86 ( 5 )   2468 - 2472   1999.9

Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition

C Niikura, A Masuda, H Matsumura

JOURNAL OF APPLIED PHYSICS   86 ( 2 )   985 - 990   1999.7

Study on improvement on uniformity of Cat-CVD SiNx thin films

KUDO Akiyoshi, MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Electron devices   99 ( 21 )   59 - 66   1999.4

Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method

A Izumi, A Masuda, H Matsumura

THIN SOLID FILMS   343   528 - 531   1999.4

Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten

A Heya, A Masuda, H Matsumura

APPLIED PHYSICS LETTERS   74 ( 15 )   2143 - 2145   1999.4

Structural properties of polycrystalline silicon thin films prepared by catalytic CVD

Extended Abstract of the Open Meeting of Cat-CVD Project   45 - 48   1999

Electrical properties of polycrystalline silicon films prepared by catalytic CVD

Extended Abstract of the Open Meeting of Cat-CVD Project   49 - 52   1999

Structural control of Cat-CVD poly-Si films by gas phase reaction using pure SiH₄ gas

Technical Digest of 11th International Photovoltaic Science and Engineering Conference   781 - 782   1999

Transport and generation mechanism of deposition precursors in catalytic CVD

Extended Abstract of the Open Meeting of Cat-CVD Project   9 - 13   1999

Detection of free radicals in Cat-CVD processes by laser induced fluorescence spectroscopy

Extended Abstract of the Open Meeting of Cat-CVD Project   15 - 18   1999

Suppression of heat radiation in catalytic CVD using "catalytic plate"

Extended Abstract of the Open Meeting of Cat-CVD Project   19 - 22   1999

High-rate deposition of SiN_x thin films prepared by Cat-CVD method

Extended Abstract of the Open Meeting of Cat-CVD Project   27 - 29   1999

Effect of exposure of Pb(Zr,Ti)O₃ ferroelectric capacitors to active ammonia gas cracked by catalytic chemical vapor deposition system

Extended Abstract of the Open Meeting of Cat-CVD Project   31 - 34   1999

Crystallization of a-Si film by atomic hydrogen anneal at low temperatures

Extended Abstract of the Open Meeting of Cat-CVD Project   39 - 43   1999

Dominant parameter determining dangling-bond density in a Si : H films prepared by catalytic CVD

Technical Digest of 11th International Photovoltaic Science and Engineering Conference   399 - 400   1999

Suppression of hexagonal GaN mixing by As4 molecular beam in cubic GaN growth on GaAs (0 0 1) substrates

Akihiro Hashimoto, Takanori Motizuki, Hideki Wada, Atsushi Masuda, Akio Yamamoto

Journal of Crystal Growth   201   392 - 395   1999

Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition : Application to preparation of Er-doped hydrogenated amorphous Si films

Proceedings of the 5th International Symposium on Sputtering & Plasma Processes   23 - 24   1999

Thermal stability of low hydrogen concentration fluorinated amorphous carbon thin films with low dielectric constant prepared by sputtering with hydrogen dilution

Proceedings of the 5th International Symposium on Sputtering & Plasma Processes   215 - 216   1999

Improvement of polycrystalline silicon film by atomic hydrogen anneal at low temperature

Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials-   119 - 122   1999

Direct crystal growth of Poly-Si films on glass substrates by catalytic CVD with incubation time

Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials-   123 - 126   1999

Material properties of heteroepitaxial yttria-stabilized zirconia films with controlled yttria contents on Si prepared by reactive sputtering

S Horita, M Watanabe, S Umemoto, A Masuda

VACUUM   51 ( 4 )   609 - 613   1998.12

Effects of oxygen gas addition and substrate cooling on preparation of amorphous carbon nitride films by magnetron sputtering

H Yokomichi, H Sakima, A Masuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   37 ( 9A )   4722 - 4725   1998.9

Surface cleaning of garium arsenide and formation of silicon nitride using by catalytic-CVD method

IZUMI Akira, MASUDA Atsushi, MATSUMURA Hideki

IEICE technical report. Electron devices   98 ( 184 )   41 - 46   1998.7

Fabrication of Pb(Zr,Ti)O<inf>3</inf>/MgO/GaN/GaAs structure for optoelectronic device applications

Atsushi Masuda, Shinya Morita, Hideki Shigeno, Akiharu Morimoto, Tatsuo Shimizu, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe

Journal of Crystal Growth   189-190   227 - 230   1998.6

Structural and electrical properties of yttria-stabilized zirconia films with controlled Y content heteroepitaxially grown on Si by reactive sputtering

S Horita, M Watanabe, A Masuda

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   54 ( 1-2 )   79 - 83   1998.6

Preparation of fluorinated amorphous carbon thin films

H Yokomichi, T Hayashi, T Amano, A Masuda

JOURNAL OF NON-CRYSTALLINE SOLIDS   227 ( Pt.A )   641 - 644   1998.5

Changes in structure and nature of defects by annealing of fluorinated amorphous carbon thin films with low dielectric constant

H Yokomichi, T Hayashi, A Masuda

APPLIED PHYSICS LETTERS   72 ( 21 )   2704 - 2706   1998.5

Structural and conductivity change caused by N, O and C incorporation in a-Si : H

T Shimizu, T Ishii, M Kumeda, A Masuda

JOURNAL OF NON-CRYSTALLINE SOLIDS   227 ( Pt.A )   403 - 406   1998.5

触媒CVD(Cat-CVD)法による低温薄膜形成

増田 淳, 和泉 亮, 松村 英樹

表面   36 ( 3 )   149 - 156   1998

Structural and electrical anisotropy and high absorption in poly-Si films prepared by catalytic chemical vapor deposition

A Masuda, R Iiduka, A Heya, C Niikura, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS   227 ( Pt.B )   987 - 991   1998

5a-A-11 Structural defects and light-induced effects of fluorinated amorphous carbon

Yokomichi H., Hayashi T., Amano T., Masuda A.

Meeting abstracts of the Physical Society of Japan   52 ( 2 )   141 - 141   1997.9

Influence of Pb incorporation on light-induced phenomena in amorphous Ge100-x-yPbxSy thin films

A Masuda, Y Yonezawa, A Morimoto, M Kumeda, T Shimizu

JOURNAL OF NON-CRYSTALLINE SOLIDS   217 ( 2-3 )   121 - 135   1997.9

Preparation of fluorinated amorphous carbon thin films with low dielectric constant

HAYASHI Tohru, AMANO Tomihiro, MASUDA Atsushi, YOKOMICHI Haruo

Technical report of IEICE. LQE   97 ( 100 )   1 - 6   1997.6

Interface control of Pb(ZrxTi1-x)O-3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer

S Horita, T Naruse, M Watanabe, A Masuda, T Kawada, Y Abe

APPLIED SURFACE SCIENCE   117   429 - 433   1997.6

Nitrogen-doping effects on electrical, optical, and structural properties in hydrogenated amorphous silicon

A Masuda, K Itoh, K Matsuda, Y Yonezawa, M Kumeda, T Shimizu

JOURNAL OF APPLIED PHYSICS   81 ( 10 )   6729 - 6737   1997.5

Nitrogen- and ammonia-plasma nitridation of hydrogenated amorphous silicon

A Masuda, S Yoshimoto, Y Yonezawa, A Morimoto, M Kumeda, T Shimizu

APPLIED SURFACE SCIENCE   113   610 - 613   1997.4

Fabrication of Pb(Zr,Ti)O₃/MgO/GaN/GaAs structure for optoelectronic device applications"

Proceedings of 2nd International Conference on Nitride Semiconductors   192   1997

Noise reduction of pHEMTs with plasmaless SiN passivation by catalytic CVD

R Hattori, G Nakamura, S Nomura, T Ichise, A Masuda, H Matsumura

GAAS IC SYMPOSIUM - 19TH ANNUAL, TECHNICAL DIGEST 1997   78 - 80   1997

Material properties of heteroepitaxial yttria-stabilized zirconia films with controlled Y content on Si prepared by reactive sputtering

Proceedings of the 4th International Symposium on Sputtering & Plasma Processes   163 - 168   1997

Heteroepitaxial growth of YSZ films with controlled Y content on Si by reactive sputtering

WATANABE Mikio, NARUSE Tetsuya, MASUDA Atsushi, HORITA Susumu

IEICE technical report. Component parts and materials   96 ( 349 )   19 - 25   1996.11

Ambient-pressure influence on droplet formation and thickness distribution in pulsed laser ablation

A Masuda, K Matsuda, S Usui, Y Yonezawa, T Minamikawa, A Morimoto, T Shimizu

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   41 ( 1 )   161 - 165   1996.10

Influence of buffer layers on lead magnesium niobate titanate thin films prepared by pulsed laser ablation

T Nakamura, A Masuda, A Morimoto, T Shimizu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   35 ( 9A )   4750 - 4754   1996.9

N-2-plasma-nitridation effects on porous silicon

H Yokomichi, A Masuda, Y Yonezawa, T Shimizu

THIN SOLID FILMS   281 ( 1/2 )   568 - 571   1996.8

X-ray photoelectron spectroscopy and electron spin resonance studies on O-2 and N2O plasma oxidation of silicon

A Masuda, Y Yonezawa, A Morimoto, M Kumeda, T Shimizu

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   39 ( 3 )   173 - 178   1996.7

Origin of charged dangling bonds in nitrogen-doped hydrogenated amorphous silicon

A Masuda, K Itoh, M Kumeda, T Shimizu

JOURNAL OF NON-CRYSTALLINE SOLIDS   200 ( Pt 1 )   395 - 398   1996.5

Mechanism of stoichiometric deposition of volatile elements in multimetal-oxide films prepared by pulsed laser ablation

A Masuda, K Matsuda, Y Yonezawa, A Morimoto, T Shimizu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   35 ( 2B )   L237 - L240   1996.2

Preparation and crystallographic characterizations of highly oriented Pb(Zr0.52Ti0.48)O-3 films and MgO buffer layers on (100)GaAs and (100)Si by pulsed laser ablation

A Masuda, Y Yamanaka, M Tazoe, T Nakamura, A Morimoto, T Shimizu

JOURNAL OF CRYSTAL GROWTH   158 ( 1-2 )   84 - 88   1996.1

HIGHLY ORIENTED PB(ZR,TI)O-3 THIN-FILMS PREPARED BY PULSED-LASER ABLATION ON GAAS AND SI SUBSTRATES WITH MGO BUFFER LAYER

A MASUDA, Y YAMANAKA, M TAZOE, Y YONEZAWA, A MORIMOTO, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 9B )   5154 - 5157   1995.9

INTERFACIAL NEUTRAL-DANGLING-BOND AND CHARGED-DANGLING-BOND DENSITIES BETWEEN HYDROGENATED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON NITRIDE IN TOP NITRIDE AND BOTTOM NITRIDE STRUCTURES

H MIN, FUKUSHI, I, A MASUDA, A MORIMOTO, M KUMEDA, T SHIMIZU

APPLIED PHYSICS LETTERS   66 ( 20 )   2718 - 2720   1995.5

NH3-PLASMA-NITRIDATION PROCESS OF (100)GAAS SURFACE OBSERVED BY ANGLE-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY

A MASUDA, Y YONEZAWA, A MORIMOTO, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   34 ( 2B )   1075 - 1079   1995.2

CORRELATION BETWEEN AC TRANSPORT AND ELECTRON-SPIN-RESONANCE IN AMORPHOUS GE-S FILMS ALLOYED WITH LEAD

K SHIMAKAWA, T KATO, K HAYASHI, A MASUDA, M KUMEDA, T SHIMIZU

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES   70 ( 5 )   1035 - 1044   1994.11

ULTRATHIN SIO2-FILMS ON SI FORMED BY N2O-PLASMA OXIDATION TECHNIQUE

A MASUDA, Y YONEZAWA, A MORIMOTO, M KUMEDA, T SHIMIZU

APPLIED SURFACE SCIENCE   81 ( 3 )   277 - 280   1994.11

RELATIONSHIP BETWEEN ELECTRICAL-CONDUCTIVITY AND CHARGED-DANGLING-BOND DENSITY IN NITROGEN-DOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

A MASUDA, K ITOH, JH ZHOU, M KUMEDA, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   33 ( 9B )   L1295 - L1297   1994.9

ORIENTATION OF MGO THIN-FILMS ON SI(100) AND GAAS(100) PREPARED BY ELECTRON-BEAM EVAPORATION

A MASUDA, K NASHIMOTO

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   33 ( 6A )   L793 - L796   1994.6

Surface nitridation process of(100)GaAs by NH₃-plasma treatment with planar magnetic field

Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials   193 - 195   1994

SPECTROSCOPIC STUDY ON N2O-PLASMA OXIDATION OF HYDROGENATED AMORPHOUS-SILICON AND BEHAVIOR OF NITROGEN

A MASUDA, FUKUSHI, I, Y YONEZAWA, T MINAMIKAWA, A MORIMOTO, M KUMEDA, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   32 ( 6A )   2794 - 2802   1993.6

NOVEL OXIDATION PROCESS OF HYDROGENATED AMORPHOUS-SILICON UTILIZING NITROUS-OXIDE PLASMA

A MASUDA, A MORIMOTO, M KUMEDA, T SHIMIZU, Y YONEZAWA, T MINAMIKAWA

APPLIED PHYSICS LETTERS   61 ( 7 )   816 - 818   1992.8

LIGHT-INDUCED ESR AND DISAPPEARANCE OF PHOTODARKENING IN AMORPHOUS GE-S FILMS ALLOYED WITH LEAD

A MASUDA, M KUMEDA, A MORIMOTO, T SHIMIZU

JOURNAL OF NON-CRYSTALLINE SOLIDS   137   985 - 988   1991.12

RELATIONSHIP BETWEEN PHOTODARKENING AND LIGHT-INDUCED ESR IN AMORPHOUS GE-S FILMS ALLOYED WITH LEAD

A MASUDA, M KUMEDA, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   30 ( 6B )   L1075 - L1078   1991.6