Faculty Profiles - MASUDA Atsushi

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Resist-removal technique without plasma using hydrogen atoms generated on heated catalyzer

MASUDA Atsushi, HASHIMOTO Kouhei, TAKAO Kazuhisa, IHSIBASHI Tomoatsu, MATSUMURA Hideki

IEICE technical report. Component parts and materials 104 ( 425 ) 39 - 43 2004.11

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Resist-removal technique without plasma using high-density hydrogen atoms generated on heated catalyzer is introduced. Both no plasma damage and no oxidation for the substrate under the resist are advantages of this process in comparison with the conventional oxygen plasma ashing. However, slow removal rate had been a problem to be solved. In this study, hydrogen flow rate, hydrogen pressure, catalyzer temperature, wafer-stage temperature and distance between catalyzer and wafer were widely changed and resist-removal rate faster than 1 μm/min was realized in the optimized condition. This removal rate should be applicable level in industry. Concentration of tungsten on wafer, possibly evaporated from the catalyzer, was estimated to be the first half of 10^<10> cm^<-2>, which brings about no problem for industrial application.

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Application of SiN_x films prepared by Cat-CVD method to GaAs-based transistors

MASUDA Atsushi, TOTSUKA Masahiro, OKU Tomoki, HATTORI Ryo, MATSUMURA Hideki

IEICE technical report. Electron devices 104 ( 111 ) 11 - 16 2004.6

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

SiN_x films prepared by catalytic chemical vapor deposition (Cat-CVD) are dense with low hydrogen content in films even at substrate temperatures around 300℃, and also have low stress. Therefore SiN_x films prepared by Cat-CVD are suitable to passivation films for semiconductor devices and various ceramic and metallic parts. SiN_x films by Cat-CVD method using no plasma excitation are especially suitable to passivation films for compound semiconductor devices since compound semiconductors are easily damaged by charged particles in plasma. In this paper various properties for SiN_x films by Cat-CVD are presented. Performances of both self-aligned gate field-effect transistors (SAGFETs) and high electron mobility transistors (HEMTs) with SiN_x passivation films by Cat-CVD or plasma-enhanced CVD are comparatively studied.

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研究室へようこそ北陸先端科学技術大学院大学(JAIST)・材料科学研究科松村研究室 Cat-CVD法のフラットパネルディスプレイ製造技術への新展開

増田淳, 松村英樹

ディスプレイ 10 ( 4 ) 71 - 74 2004.4

Present Status and Future Prospects of Cat-CVD Technique : Gas-Phase Diagnostics and Device Applications

MASUDA Atsushi, UMEMOTO Hironobu, MATSUMURA Hideki

The Transactions of the Institute of Electronics, Information and Communication Engineers C 87 ( 2 ) 203 - 215 2004.2

Fabrication of Amorphous Silicon Solar Cells by Catalytic Chemical Vapor Deposition

MASUDA Atsushi, NISHIMURA Masaya, KATOUNO Kouichi, SUGITA Ken, IMAMORI Kensaku, ITOH Masaya, MATSUMURA Hideki

IEICE technical report. Component parts and materials 103 ( 412 ) 1 - 6 2003.11

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Performances for solar cells using hydrogenated amorphous silicon (a-Si:H) films prepared by catalytic chemical vapor deposition (Cat-CVD) are introduced together with fundamental techniques for improving solar-cell efficiencies. Low hydrogen (H) content in a-Si:H films, which is possible origin of stability for light soaking, is one of the characteristic features of a-Si:H films by Cat-CVD. A large amount of H atoms in gas phase are also remarkable properties for Cat-CVD. Although it is worried that transparent conducting oxide electrode is reduced by a large amount of H atoms, it was found that zinc oxide (ZnO) coating is effective for suppressing the reduction of tin oxide (SnO_2). Feasibility of microcrystalline silicon (μc-Si:H) and hydrogenated amorphous silicon-carbon(a-Si_<1-x>C_x:H) films prepared by Cat-CVD for p-type window-layer materials was studied. Effects of the buffer layer at p/i interface on improving the solar-cell performances are also demonstrated.

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低温触媒CVD装置の開発 (特集/新規事業創出と大学発ベンチャー)

増田淳, 松村英樹, 南川俊治

化学工業 54 ( 8 ) 631 - 635 2003.8

Behavior of Hydrogens in the poly-Si Film Prepaired by ELA Method : Relationship Between the Concentration of the Hydrogen Molecule in the SiN Film and Crystal growth

KAWAMOTO N, MASUDA A, HASEGAWA I, ANWAR BIN ABD, AZIZ Fakhrul, YOGORO Y, MATSUO N, YAMANO K, MATSUMURA H, HAMADA H, SHIBATA K

Technical report of IEICE. OME 103 ( 8 ) 31 - 34 2003.4

Language：Japanese Publisher：一般社団法人電子情報通信学会

In this study, we clarify the role of hydrogen in the poly-Si film on the Cat-CVD SiN film for its crystal growth by ELA. H_2 concentrations in the SiN film are 2.3, 4.2, 8.2 at%, respectively. For 500mJ/cm^2 and 8shots, Raman peak FWHM drastically increases and some of the poly-Si films disappear by H_2 burst during the ELA for 8.2at%. Spin density of 8.2at% is larger than that of 2.3at%. These results indicate that the hydrogens incorporated in the Si from SiN film during the ELA leave behind the crystal defects in the poly-Si film when they burst into vacuum. For 500mJ/cm^2, although the Δω decreases drastically with increasing the shot number for 2.3 and 4.2at%, it becomes small slowly with the shot number for 8.2at%. The grain size of 2.3at% is larger than that of 4.2at%. We discuss these results by using SPC (solid phase crystallization) model considering the incorporation of the hydrogens and the substrate thermal conductivity. The usefulness of Cat-CVD method in the ELA poly-Si field is also referred.

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Characteristics of Laser Annealing for Amorphous Si Films Prepared by Catalytic Chemical Vapor Deposition and Application to Fabrication of Polycrystalline Si Thin-Film Transistors

MASUDA Atsushi, YOGORO Yusuke, MATSUMURA Hideki, MIYASHITA Kazuyuki, SHIMODA Tatsuya

Technical report of IEICE. OME 103 ( 8 ) 25 - 30 2003.4

Language：Japanese Publisher：一般社団法人電子情報通信学会

Crystallinity of excimer-laser annealed polycrystalline Si (poly-Si) films using amorphous Si (a-Si:H) precursor films prepared by catalytic chemical vapor deposition (Cat-CVD) is presented. No dehydrogenation process is required for Cat-CVD a-Si:H films because of low H content about 1 at. % even at low-temperature deposition below 300 ℃. It was confirmed that the crystallinity is improved using a-Si:H precursor films prepared by Cat-CVD in comparison with that using a-Si:H precursor films prepared by plasma-enhanced CVD. Cat-CVD also has the advantages of high-rate and large-area deposition of a-Si:H precursor films. Top-gate type thin-film transistors fabricated using Cat-CVD a-Si:H precursor films show the mobility reaching 230 cm^2/Vs being comparable to those using low-pressure CVD ones.

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Recent Development of Fabrication Techniques for Thin-Film Transistors by Catalytic Chemical Vapor Deposition

MASUDA Atsushi, MATSUMURA Hideki

IEICE technical report. Component parts and materials 102 ( 434 ) 71 - 76 2002.11

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Recent development of fabrication techniques for thin-film transistors (TFTs) used in flat-panel displays by catalytic chemical vapor deposition (Cat-CVD) is introduced. TFTs using amorphous Si films prepared by Cat-CVD show stable characteristics under bias stress. TFTs using polycrystalline Si films prepared directly by Cat-CVD at low temperatures show the mobility of approximately 50 cm^2/Vs. Amorphous Si films are also useful as precursor films for excimer-laser annealing. The Cat-CVD method appears feasible for mass-production because of high efficiency of gas use, high deposition rate and large-area deposition beyond 1-m size. Development of Cat-CVD apparatus for mass-production is also in progress. It is expected that the Cat-CVD method will be employed in the mass production of amorphous Si TFTs, directly deposited polycrystalline Si TFTs and polycrystalline Si TFTs fabricated by excimer-laser annealing.

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In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si : H solar cells

A Masuda, Y Ishibashi, K Uchida, K Kamesaki, A Izumi, H Matsumura

SOLAR ENERGY MATERIALS AND SOLAR CELLS 74 ( 1-4 ) 373 - 377 2002.10

What is the difference between catalytic CVD and plasma-enhanced CVD? - Gas-phase kinetics and film properties

A Masuda, A Izumi, H Umemoto, H Matsumura

VACUUM 66 ( 3-4 ) 293 - 297 2002.8

Preparation of boron-carbon-nitrogen thin films by magnetron sputtering

H Yokomichi, T Funakawa, A Masuda

VACUUM 66 ( 3-4 ) 245 - 249 2002.8

Influence of atomic hydrogen on transparent conducting oxides during hydrogenated amorphous and microcrystalline Si preparation by catalytic chemical vapor deposition

A Masuda, K Imamori, H Matsumura

THIN SOLID FILMS 411 ( 1 ) 166 - 170 2002.5

Photoinduced volume expansion and contraction in a-Si : H films

N Yoshida, Y Sobajima, H Kamiguchi, T Iida, T Hatano, H Mori, Y Nakae, M Itoh, A Masuda, H Matsumura, S Nonomura

JOURNAL OF NON-CRYSTALLINE SOLIDS 299 516 - 520 2002.4

Effects of atomic hydrogen in gas phase on a-Si : H and poly-Si growth by catalytic CVD

H Umemoto, Y Nozaki, M Kitazoe, K Horii, K Ohara, D Morita, K Uchida, Y Ishibashi, M Komoda, K Kamesaki, A Izumi, A Masuda, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS 299 9 - 13 2002.4

Low-Temperature Fabrication and Characteristics of Poly-Si TFTs by Cat-CVD

Matsumura Hideki, Masuda Atsushi, Izumi Akira

Proceedings of the IEICE General Conference 2002 ( 2 ) 171 - 172 2002.3

Low-resistivity phosphorus-doped polycrystalline silicon thin films formed by catalytic chemical vapor deposition and successive rapid thermal annealing

R Morimoto, A Izumi, A Masuda, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41 ( 2A ) 501 - 506 2002.2

Direct detection of H atoms in the catalytic chemical vapor deposition of the SiH4/H-2 system

H Umemoto, K Ohara, D Morita, Y Nozaki, A Masuda, H Matsumura

JOURNAL OF APPLIED PHYSICS 91 ( 3 ) 1650 - 1656 2002.2

Cat-CVD法による低温poly-Si TFT製造技術

月刊ディスプレイ 8 ( 7 ) 10 - 15 2002

Cat-CVD technology as a new tool for fabrication of large area display

Proceedings of 2nd International Display Manufacturing Conference 143-146 2002

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