Faculty Profiles - MASUDA Atsushi

MISC - MASUDA Atsushi

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Preparation of SiNx passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 253 - 256 2000

Mixing mechanism of h-GaN in c-GaN growth on GaAs (001) substrates

A Hashimoto, H Wada, T Ueda, Y Nishio, A Masuda, A Yamamoto

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 176 ( 1 ) 519 - 524 1999.11

Effect of sputtering with hydrogen dilution on fluorine concentration of low hydrogen content fluorinated amorphous carbon thin films with low dielectric constant

H Yokomichi, A Masuda

JOURNAL OF APPLIED PHYSICS 86 ( 5 ) 2468 - 2472 1999.9

Annealing effect of Pb(Zr, Ti)O-3 ferroelectric capacitor in active ammonia gas cracked by catalytic chemical vapor deposition system

T Minamikawa, Y Yonezawa, T Nakamura, Y Fujimori, A Masuda, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38 ( 9B ) 5358 - 5360 1999.9

Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition

C Niikura, A Masuda, H Matsumura

JOURNAL OF APPLIED PHYSICS 86 ( 2 ) 985 - 990 1999.7

Study on improvement on uniformity of Cat-CVD SiNx thin films

KUDO Akiyoshi, MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Electron devices 99 ( 21 ) 59 - 66 1999.4

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

SiNx thin-film deposition by catalytic CVD (Cat-CVD) method is expected to realize a 1ow-damage plasmaldss process in fabrication of passivation fi1ms for compound-semiconductor devices etc. A tungsten wire was used as a catalyzer to decompose SiH_4 and NH_3 gases, SiNx thin films were deposited on GaAs substrates, and the uniformity of well-stoichiometric (Si_3N_4) films, with about 2.0 in refractive index, was evaluated by ellipsometry. It was found that the film thickness decreases about 15% circumferentially from the center, but the uniformity of refractive index keeps within about ±2.5% in a 4-inch wafer even though Si and N are supplied seperately. It is confirmed that preparation of device-quality SiNx thin films on large substrates can be achieved by Cat-CVD method.

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Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method

A Izumi, A Masuda, H Matsumura

THIN SOLID FILMS 343 528 - 531 1999.4

Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten

A Heya, A Masuda, H Matsumura

APPLIED PHYSICS LETTERS 74 ( 15 ) 2143 - 2145 1999.4

Direct crystal growth of Poly-Si films on glass substrates by catalytic CVD with incubation time

Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials- 123 - 126 1999

Structural properties of polycrystalline silicon thin films prepared by catalytic CVD

Extended Abstract of the Open Meeting of Cat-CVD Project 45 - 48 1999

Electrical properties of polycrystalline silicon films prepared by catalytic CVD

Extended Abstract of the Open Meeting of Cat-CVD Project 49 - 52 1999

Structural control of Cat-CVD poly-Si films by gas phase reaction using pure SiH4 gas

Technical Digest of 11th International Photovoltaic Science and Engineering Conference 781 - 782 1999

Transport and generation mechanism of deposition precursors in catalytic CVD

Extended Abstract of the Open Meeting of Cat-CVD Project 9 - 13 1999

Detection of free radicals in Cat-CVD processes by laser induced fluorescence spectroscopy

Extended Abstract of the Open Meeting of Cat-CVD Project 15 - 18 1999

Suppression of heat radiation in catalytic CVD using "catalytic plate"

Extended Abstract of the Open Meeting of Cat-CVD Project 19 - 22 1999

High-rate deposition of SiNx thin films prepared by Cat-CVD method

Extended Abstract of the Open Meeting of Cat-CVD Project 27 - 29 1999

Effect of exposure of Pb(Zr,Ti)O3 ferroelectric capacitors to active ammonia gas cracked by catalytic chemical vapor deposition system

Extended Abstract of the Open Meeting of Cat-CVD Project 31 - 34 1999

Crystallization of a-Si film by atomic hydrogen anneal at low temperatures

Extended Abstract of the Open Meeting of Cat-CVD Project 39 - 43 1999

Dominant parameter determining dangling-bond density in a Si : H films prepared by catalytic CVD

Technical Digest of 11th International Photovoltaic Science and Engineering Conference 399 - 400 1999

Suppression of hexagonal GaN mixing by As4 molecular beam in cubic GaN growth on GaAs (0 0 1) substrates

Akihiro Hashimoto, Takanori Motizuki, Hideki Wada, Atsushi Masuda, Akio Yamamoto

Journal of Crystal Growth 201 392 - 395 1999

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MISC - MASUDA Atsushi