Faculty Profiles - MASUDA Atsushi

MISC - MASUDA Atsushi

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Recent progress of Cat-CVD research in Japan -Bridging between the first and second Cat-CVD conferences-

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 17-22 2002

Cat-CVD法による微結晶シリコン膜の作製とデバイス応用

固体物理 37 ( 12 ) 1003 - 1009 2002

Deposition chemistry in the Cat-CVD processes of the SiH4/NH3 system

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 35-38 2002

Development of Cat-CVD apparatus for 1-m-size large-area deposition

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 75-80 2002

Key factors to improve efficiency of Cat-CVD a-Si solar cells

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 223-226 2002

Coverage properties of silicon nitride film prepared by Cat-CVD method

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 235-238 2002

Fabrication of a-Si1-xCx:H thin films for solar cells by Cat-CVD method using carbon catalyzer

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 239-242 2002

Crystallization by excimer laser annealing for a-Si:H films with low hydrogen content prepared by Cat-CVD

Extended Abstract of 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process 355-358 2002

Development of large-area uniform deposition technique on 1-m-size substrate by catalytic chemical vapor deposition

Minoru Karasawa, Masahiro Sakai, Keiji Ishibashi, Masahiko Tanaka, Atsushi Masuda, Hideki Matsumura

Shinku/Journal of the Vacuum Society of Japan 45 ( 3 ) 123 - 126 2002

Application of catalytic chemical vapor deposition to fabrication of next-generation large-area displays

MASUDA Atsushi, MATSUMURA Hideki

OYOBUTURI 71 ( 7 ) 833 - 838 2002

Development of chamber cleaning reducing both cost and environmental pollution by using catalytic cracking reaction of NF_3

NISHIMURA Satoru, MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Component parts and materials 101 ( 395 ) 61 - 65 2001.10

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Etch rates of 3500 nm/min for single-crystalline silicon wafer, 740 nm/min for silicon nitride films on silicon wafer and 50 nm/min for fused quartz are obtained by using NF_3-decomposed species generated by catalytic cracking reaction on a heated tungsten wire at 2400℃. No fluorine contamination on the amorphous silicon layer with a thickness of 120 nm, deposited after the chamber cleanig by using the above NF_3-decomposed species, is detected by X-ray photoelectron spectroscopy. These results indicate that both deposition and in situ chamber cleaning are carried out in the catalytic chemical vapor deposition(Cat-CVD) apparatus, whitch is an important factor for the industrial application.

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Influence of a-Si:H deposition by catalytic CVD on transparent conducting oxides

Kensaku Imamori, Atsushi Masuda, Hideki Matsumura

Thin Solid Films 395 ( 1-2 ) 147 - 151 2001.9

Photo-induced volume changes in a-Si : H films prepared by Cat-CVD method

T Hatano, Y Nakae, H Mori, K Ohkado, N Yoshida, S Nonomura, M Itoh, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 84 - 86 2001.9

Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly-Si

K Kamesaki, A Masuda, A Izumi, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 169 - 172 2001.9

Formation of silicon films for solar cells by the Cat-CVD method

M Komoda, K Kamesaki, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 198 - 201 2001.9

Fabrication of amorphous carbon nitride films by hot-wire chemical vapor deposition

H Yokomichi, A Masuda, N Kishimoto

THIN SOLID FILMS 395 ( 1-2 ) 249 - 252 2001.9

A Cat-CVD Si3N4 film study and its application to the ULSI process

Y Uchiyama, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 275 - 279 2001.9

Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature

H Sato, A Izumi, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 280 - 283 2001.9

Preparation of SiNx passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD

T Minamikawa, Y Yonezawa, A Heya, Y Fujimori, T Nakamura, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 284 - 287 2001.9

High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

M Sakai, T Tsutsumi, T Yoshioka, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 330 - 334 2001.9

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MISC - MASUDA Atsushi