Faculty Profiles - MASUDA Atsushi

MISC - MASUDA Atsushi

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Material properties of heteroepitaxial yttria-stabilized zirconia films with controlled Y content on Si prepared by reactive sputtering

Proceedings of the 4th International Symposium on Sputtering & Plasma Processes 163 - 168 1997

Noise reduction of pHEMTs with plasmaless SiN passivation by catalytic CVD

R Hattori, G Nakamura, S Nomura, T Ichise, A Masuda, H Matsumura

GAAS IC SYMPOSIUM - 19TH ANNUAL, TECHNICAL DIGEST 1997 78 - 80 1997

Heteroepitaxial growth of YSZ films with controlled Y content on Si by reactive sputtering

WATANABE Mikio, NARUSE Tetsuya, MASUDA Atsushi, HORITA Susumu

IEICE technical report. Component parts and materials 96 ( 349 ) 19 - 25 1996.11

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Yttria-stabilized zirconia (YSZ) films with controlled Y content were heteroepitaxially grown on n-Si (100) substrates by reactive sputtering and their material properties were investigated. It was found that the films deposited with 2.3 to 19.7at.% Y and with 1.2at.% Y had a cubic YSZ (100) structure and a monoclinic (ZrO_2)_<1-x>(Y_2O_3)_x(100)/cubic YSZ(100) structure, respectively, on Si (100) substrates. The leakage current of the film at the applied voltage of 5V was decreased to 10^<-7> A/cm^2 by reducing the Y content to 1.2 at.%. The capacitance (C)-voltage(V) characteristics of the samples showed the hysteresis curve derived from the ion drift and the hysteresis width of the sample with 1.2at.% Y was the narrowest in our study. The relative dielectric constant estimated from the C-V measurements at 1 MHz decreased from 24 to 16 with decreasing the Y content from 9.4 to 1.2 at%.

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Ambient-pressure influence on droplet formation and thickness distribution in pulsed laser ablation

A Masuda, K Matsuda, S Usui, Y Yonezawa, T Minamikawa, A Morimoto, T Shimizu

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 41 ( 1 ) 161 - 165 1996.10

Influence of buffer layers on lead magnesium niobate titanate thin films prepared by pulsed laser ablation

T Nakamura, A Masuda, A Morimoto, T Shimizu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 35 ( 9A ) 4750 - 4754 1996.9

N-2-plasma-nitridation effects on porous silicon

H Yokomichi, A Masuda, Y Yonezawa, T Shimizu

THIN SOLID FILMS 281 ( 1/2 ) 568 - 571 1996.8

X-ray photoelectron spectroscopy and electron spin resonance studies on O-2 and N2O plasma oxidation of silicon

A Masuda, Y Yonezawa, A Morimoto, M Kumeda, T Shimizu

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 39 ( 3 ) 173 - 178 1996.7

Origin of charged dangling bonds in nitrogen-doped hydrogenated amorphous silicon

A Masuda, K Itoh, M Kumeda, T Shimizu

JOURNAL OF NON-CRYSTALLINE SOLIDS 200 ( Pt 1 ) 395 - 398 1996.5

Mechanism of stoichiometric deposition of volatile elements in multimetal-oxide films prepared by pulsed laser ablation

A Masuda, K Matsuda, Y Yonezawa, A Morimoto, T Shimizu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 35 ( 2B ) L237 - L240 1996.2

Preparation and crystallographic characterizations of highly oriented Pb(Zr0.52Ti0.48)O-3 films and MgO buffer layers on (100)GaAs and (100)Si by pulsed laser ablation

A Masuda, Y Yamanaka, M Tazoe, T Nakamura, A Morimoto, T Shimizu

JOURNAL OF CRYSTAL GROWTH 158 ( 1-2 ) 84 - 88 1996.1

HIGHLY ORIENTED PB(ZR,TI)O-3 THIN-FILMS PREPARED BY PULSED-LASER ABLATION ON GAAS AND SI SUBSTRATES WITH MGO BUFFER LAYER

A MASUDA, Y YAMANAKA, M TAZOE, Y YONEZAWA, A MORIMOTO, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 34 ( 9B ) 5154 - 5157 1995.9

INTERFACIAL NEUTRAL-DANGLING-BOND AND CHARGED-DANGLING-BOND DENSITIES BETWEEN HYDROGENATED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON NITRIDE IN TOP NITRIDE AND BOTTOM NITRIDE STRUCTURES

H MIN, FUKUSHI, I, A MASUDA, A MORIMOTO, M KUMEDA, T SHIMIZU

APPLIED PHYSICS LETTERS 66 ( 20 ) 2718 - 2720 1995.5

NH3-PLASMA-NITRIDATION PROCESS OF (100)GAAS SURFACE OBSERVED BY ANGLE-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY

A MASUDA, Y YONEZAWA, A MORIMOTO, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 34 ( 2B ) 1075 - 1079 1995.2

CORRELATION BETWEEN AC TRANSPORT AND ELECTRON-SPIN-RESONANCE IN AMORPHOUS GE-S FILMS ALLOYED WITH LEAD

K SHIMAKAWA, T KATO, K HAYASHI, A MASUDA, M KUMEDA, T SHIMIZU

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES 70 ( 5 ) 1035 - 1044 1994.11

ULTRATHIN SIO2-FILMS ON SI FORMED BY N2O-PLASMA OXIDATION TECHNIQUE

A MASUDA, Y YONEZAWA, A MORIMOTO, M KUMEDA, T SHIMIZU

APPLIED SURFACE SCIENCE 81 ( 3 ) 277 - 280 1994.11

RELATIONSHIP BETWEEN ELECTRICAL-CONDUCTIVITY AND CHARGED-DANGLING-BOND DENSITY IN NITROGEN-DOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

A MASUDA, K ITOH, JH ZHOU, M KUMEDA, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 33 ( 9B ) L1295 - L1297 1994.9

ORIENTATION OF MGO THIN-FILMS ON SI(100) AND GAAS(100) PREPARED BY ELECTRON-BEAM EVAPORATION

A MASUDA, K NASHIMOTO

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 33 ( 6A ) L793 - L796 1994.6

Surface nitridation process of(100)GaAs by NH<sub>3</sub>-plasma treatment with planar magnetic field

Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials 193 - 195 1994

SPECTROSCOPIC STUDY ON N2O-PLASMA OXIDATION OF HYDROGENATED AMORPHOUS-SILICON AND BEHAVIOR OF NITROGEN

A MASUDA, FUKUSHI, I, Y YONEZAWA, T MINAMIKAWA, A MORIMOTO, M KUMEDA, T SHIMIZU

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 32 ( 6A ) 2794 - 2802 1993.6

NOVEL OXIDATION PROCESS OF HYDROGENATED AMORPHOUS-SILICON UTILIZING NITROUS-OXIDE PLASMA

A MASUDA, A MORIMOTO, M KUMEDA, T SHIMIZU, Y YONEZAWA, T MINAMIKAWA

APPLIED PHYSICS LETTERS 61 ( 7 ) 816 - 818 1992.8

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