Faculty Profiles - MASUDA Atsushi

MISC - MASUDA Atsushi

Division display 121 - 140 of about 162 ／ All the affair displays >>

Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition : Application to preparation of Er-doped hydrogenated amorphous Si films

Proceedings of the 5th International Symposium on Sputtering & Plasma Processes 23 - 24 1999

Thermal stability of low hydrogen concentration fluorinated amorphous carbon thin films with low dielectric constant prepared by sputtering with hydrogen dilution

Proceedings of the 5th International Symposium on Sputtering & Plasma Processes 215 - 216 1999

Improvement of polycrystalline silicon film by atomic hydrogen anneal at low temperature

Digest of Technical Papers 1999 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials- 119 - 122 1999

Material properties of heteroepitaxial yttria-stabilized zirconia films with controlled yttria contents on Si prepared by reactive sputtering

S Horita, M Watanabe, S Umemoto, A Masuda

VACUUM 51 ( 4 ) 609 - 613 1998.12

Effects of oxygen gas addition and substrate cooling on preparation of amorphous carbon nitride films by magnetron sputtering

H Yokomichi, H Sakima, A Masuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 37 ( 9A ) 4722 - 4725 1998.9

Surface cleaning of garium arsenide and formation of silicon nitride using by catalytic-CVD method

IZUMI Akira, MASUDA Atsushi, MATSUMURA Hideki

IEICE technical report. Electron devices 98 ( 184 ) 41 - 46 1998.7

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

We proposed a novel method of low temperature surface cleaning technology of GaAs and formation of high quality silicon nitride(SiN_x) films by catalytic chemical vapor deposition(Cat-CVD) method. An NH_3 gas was used for the surface cleaning of(100)GaAs without any chemical treatment at the substrate temperature as low as 150℃. XPS measurements revealed obvious reduction of intensities of oxygen related peaks of GaAs and appearance of nitrogen related peaks from long time treated samples. Using a SiH_4 and NH_3 gas mixture, stoichiometric, conformal step coverage and low hydrogen content SiN_x films were obtained below 300℃ by this method.

CiNii Article

CiNii Books

researchmap

Fabrication of Pb(Zr,Ti)O<inf>3</inf>/MgO/GaN/GaAs structure for optoelectronic device applications

Atsushi Masuda, Shinya Morita, Hideki Shigeno, Akiharu Morimoto, Tatsuo Shimizu, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe

Journal of Crystal Growth 189-190 227 - 230 1998.6

Structural and electrical properties of yttria-stabilized zirconia films with controlled Y content heteroepitaxially grown on Si by reactive sputtering

S Horita, M Watanabe, A Masuda

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 54 ( 1-2 ) 79 - 83 1998.6

Preparation of fluorinated amorphous carbon thin films

H Yokomichi, T Hayashi, T Amano, A Masuda

JOURNAL OF NON-CRYSTALLINE SOLIDS 227 ( Pt.A ) 641 - 644 1998.5

Changes in structure and nature of defects by annealing of fluorinated amorphous carbon thin films with low dielectric constant

H Yokomichi, T Hayashi, A Masuda

APPLIED PHYSICS LETTERS 72 ( 21 ) 2704 - 2706 1998.5

Structural and conductivity change caused by N, O and C incorporation in a-Si : H

T Shimizu, T Ishii, M Kumeda, A Masuda

JOURNAL OF NON-CRYSTALLINE SOLIDS 227 ( Pt.A ) 403 - 406 1998.5

Structural and electrical anisotropy and high absorption in poly-Si films prepared by catalytic chemical vapor deposition

A Masuda, R Iiduka, A Heya, C Niikura, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS 227 ( Pt.B ) 987 - 991 1998

触媒CVD(Cat-CVD)法による低温薄膜形成

増田淳, 和泉亮, 松村英樹

表面 36 ( 3 ) 149 - 156 1998

5a-A-11 Structural defects and light-induced effects of fluorinated amorphous carbon

Yokomichi H., Hayashi T., Amano T., Masuda A.

Meeting abstracts of the Physical Society of Japan 52 ( 2 ) 141 - 141 1997.9

Influence of Pb incorporation on light-induced phenomena in amorphous Ge100-x-yPbxSy thin films

A Masuda, Y Yonezawa, A Morimoto, M Kumeda, T Shimizu

JOURNAL OF NON-CRYSTALLINE SOLIDS 217 ( 2-3 ) 121 - 135 1997.9

Preparation of fluorinated amorphous carbon thin films with low dielectric constant

HAYASHI Tohru, AMANO Tomihiro, MASUDA Atsushi, YOKOMICHI Haruo

Technical report of IEICE. LQE 97 ( 100 ) 1 - 6 1997.6

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Fluorinated amorphous carbon(a-C:F) thin films were prepared using CH_4 and CF_4 gases by the plasma chemical vapor deposition (CVD) method. Electron spin resonance(ESR), infrared(IR) absorption, optical absorption, X-ray photoelectron spectroscopy(XPS) and dielectric constant measurements were carried out in order to investigate the basic properties of these films. XPS measurements revealed that the fluorine concentration of the films increased with increasing R, where R is the ratio of CF_4 flow rate to the total gas flow rate. When R = 0.97, the fluorine concentration increased remarkably to approximately 67 at.%. In this film, CF_3 mode appeared in the IR spectrum and the hydrogen-related modes disappeared. The dielectric constant of the film was estimated to be 2.2 at 1MHz and the line width of the ESR spectrum of the film, 4.2 mT, was broader than that of the other films. We also discuss the effect of thermal annealing on dielectric constant and the fluorine bonding configuration.

CiNii Article

CiNii Books

researchmap

Interface control of Pb(ZrxTi1-x)O-3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer

S Horita, T Naruse, M Watanabe, A Masuda, T Kawada, Y Abe

APPLIED SURFACE SCIENCE 117 429 - 433 1997.6

Nitrogen-doping effects on electrical, optical, and structural properties in hydrogenated amorphous silicon

A Masuda, K Itoh, K Matsuda, Y Yonezawa, M Kumeda, T Shimizu

JOURNAL OF APPLIED PHYSICS 81 ( 10 ) 6729 - 6737 1997.5

Nitrogen- and ammonia-plasma nitridation of hydrogenated amorphous silicon

A Masuda, S Yoshimoto, Y Yonezawa, A Morimoto, M Kumeda, T Shimizu

APPLIED SURFACE SCIENCE 113 610 - 613 1997.4

Fabrication of Pb(Zr,Ti)O<sub>3</sub>/MgO/GaN/GaAs structure for optoelectronic device applications"

Proceedings of 2nd International Conference on Nitride Semiconductors 192 1997

　 PREV - NEXT 　

<MASUDA Atsushi>

MISC - MASUDA Atsushi