Faculty Profiles - MASUDA Atsushi

MISC - MASUDA Atsushi

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Guiding principles for device-grade hydrogenated amorphous silicon films and design of catalytic chemical vapor deposition apparatus

A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 112 - 115 2001.9

High-stability hydrogenated amorphous silicon films for light-soaking prepared by catalytic CVD at high deposition rates

M Itoh, Y Ishibashi, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 138 - 141 2001.9

Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH4

Y Nozaki, M Kitazoe, K Horii, H Umemoto, A Masuda, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 47 - 50 2001.9

Development of Cat-CVD apparatus - a method to control wafer temperatures under thermal influence of heated catalyzer

M Karasawa, A Masuda, K Ishibashi, H Matsumura

THIN SOLID FILMS 395 ( 1-2 ) 71 - 74 2001.9

Thin-Film Transistors Fabricated by Catalytic Chemical Vapor Deposition Method

SAKAI Masahiro, TSUTSUMI Takayuki, MASUDA Atsushi, MATSUMURA Hideki

IEICE technical report. Electron devices 101 ( 14 ) 27 - 31 2001.4

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

We have developed amorphous silicon thin-film transistors (TFT's) by the catalytic chemical vapor deposition (Cat-CVD) method. The amorphous silicon films deposited at a high rate (1.9 nm s^<-1>) show low spin density (1.6×10^<16>cm^<-3>) measured by electron spin resonance. TFT's, with a field effect mobility about 0.85 cm^2V^<-1>s^<-1>, are obtained with the gate SiN_x and phosphorous-doped amorphous silicon layers also fabricated by Cat-CVD even when the TFT's are fabricated by back channel etching process. The bias stress test has been performed on the TFT samples with SiO_2 as gate dielectric. The stress tolerance is very high, showing that the TFT's are suitable for operating the organic electroluminescence displays.

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Catalytic chemical sputtering: A novel method for obtaining large-grain polycrystalline silicon

H Matsumura, K Kamesaki, A Masuda, A Izumi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 40 ( 3B ) L289 - L291 2001.3

Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition

A Masuda, C Niikura, Y Ishibashi, H Matsumura

SOLAR ENERGY MATERIALS AND SOLAR CELLS 66 ( 1-4 ) 259 - 265 2001.2

Study on catalytic-CVD a-Si:H-based solar cells with high deposition rate

Technical Digest of 12th International Photovoltaic Science and Engineering Conference 243-244 2001

Properties of phosphorus-doped polycrystalline silicon films formed by catalytic chemical vapor deposition and successive rapid thermal annealing

Proceedings of 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices 39-40 2001

Precise substrate temperature control to prepare SiN<sub>x</sub> films for PZT ferroelectric devices by catalytic chemical vapor deposition

Extended Abstracts of 1st International Meeting on Ferroelectric Random Access Memories 130-131 2001

1 m size large-area deposition of a-Si:H films by catalytic CVD using novel showerhead equipped with catalyzers

Proceedings of 21st International Display Research Conference in conjunction with 8th International Display Workshops 1735-1736 2001

Raman characterization of lattice-matched GaInAsN layers grown on GaAs (001) substrates

Technical Digest of 12th International Photovoltaic Science and Engineering Conference 665-666 2001

What is the difference between catalytic CVD and plasma-enhanced CVD? -Gas-phase kinetics and film properties

Proceedings of 6th International Symposium on Sputtering & Plasma Processes 213-216 2001

Preparation of boron-carbon-nitrogen thin films by magnetron sputtering

Proceedings of 6th International Symposium on Sputtering & Plasma Processes 402-405 2001

Properties of thin-film transistors using amorphous silicon films prepared by catalytic CVD with high deposition rate

Digest of Technical Papers 8th International Workshop on Active-Matrix Liquid-Crystal Displays -TFT Technologies and Related Materials- 147-150 2001

In-situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells

Technical Digest of 12th International Photovoltaic Science and Engineering Conference 241-242 2001

Effects of double bonding configurations on thermal stability of low-hydrogen concentration fluorinated amorphous carbon thin-films with low dielectric constant prepared by sputtering with hydrogen dilution

H Yokomichi, A Masuda

VACUUM 59 ( 2-3 ) 771 - 776 2000.11

Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy

Y Nozaki, K Kongo, T Miyazaki, M Kitazoe, K Horii, H Umemoto, A Masuda, H Matsumura

JOURNAL OF APPLIED PHYSICS 88 ( 9 ) 5437 - 5443 2000.11

Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition: application to preparation of Er-doped hydrogenated amorphous Si films

A Masuda, J Sakai, H Matsumura

VACUUM 59 ( 2-3 ) 635 - 640 2000.11

Proposal of chemical sputtering method and its application to prepare large grain size poly-Si films

KAMESAKI Koji, MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Component parts and materials 100 ( 396 ) 7 - 12 2000.10

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Si films are usually prepared by chemical vapor deposition(CVD) method. In the present work, Si films are formed by utilizing chemical transport of SiH_n species which are generated by the reaction between a solid Si and H atoms. We named the method"chemical sputtering"from an analogy to the conventional physical sputtering. The deposited Si films on Si, SiO_2 and quartz substrates are polycrystalline ones, and there is no amorphous phase detected by Raman spectroscopy. The grain size becomes large, compared with polycrystalline Si films formed by any low-temperature deposition methods ever reported. The grain size exceeds 1μm for the films on SiO_2 substrate with the thickness about 1μm.

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