Faculty Profiles - MASUDA Atsushi

MISC - MASUDA Atsushi

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Control of polycrystalline silicon structure by the two-step deposition method

A Heya, A Izumi, A Masuda, H Matsumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39 ( 7A ) 3888 - 3895 2000.7

Effects of nitrogen incorporation on structural properties of fluorinated amorphous carbon films

H Yokomichi, A Masuda

JOURNAL OF NON-CRYSTALLINE SOLIDS 271 ( 1-2 ) 147 - 151 2000.6

Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal

A Heya, A Masuda, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 ( Pt.A ) 619 - 623 2000.5

Transport mechanism of deposition precursors in catalytic chemical vapor deposition studied using a reactor tube

N Honda, A Masuda, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 ( Pt.A ) 100 - 104 2000.5

Novel deposition technique of Er-doped a-Si : H combining catalytic chemical vapor deposition and pulsed laser-ablation

A Masuda, J Sakai, H Akiyama, O Eryu, K Nakashima, H Matsumura

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 ( Pt.A ) 136 - 140 2000.5

Low-temperature preparation of poly-Si films by catalytic CVD and application to TFTs

MASUDA Atsushi, IZUMI Akira, MATSUMURA Hideki

IEICE technical report. Electron devices 100 ( 1 ) 13 - 18 2000.4

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD, is one of the promising candidates for large-area thin-film formation method at low temperatures. Recently, Cat-CVD is widely studied in order to apply to device-fabrication process in semiconductor industry. Polycrystalline silicon (poly-Si) films prepared by Cat-CVD are expected to be applied to thin-film transistors (TFTs). In 1991 the authors succeeded in preparing poly-Si Films by this method for the first time. Until 1998 they systematically studied preparation of poly-Si films by Cat-CVD and application to TFTs under the R&D Projects in Cooperation with Academic Institutions "Cat-CVD Fabrication Processes for Semiconductor Devices" from the New Energy and Industrial Technology Development Organization (NEDO). In this paper various structural and electrical properties of poly-Si films prepared by Cat-CVD at low temperatures are presented.

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Luminescence Properties of Er-Doped a-Si:H Films Prepared by Cat-CVD Combined with Pulsed Laser Ablation

MASUDA Atsushi, SAKAI Joe, AKIYAMA Haruo, ERYU Osamu, NAKASHIMA Kenshiro, MATSUMURA Hideki

2000 ( 10 ) 31 - 35 2000.2

High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 311 - 314 2000

Development of Cat-CVD apparatus-A method to control wafer temperatures under thermal influence of heated catalyzer

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 117 - 120 2000

High stability amorphous silicon films for light soaking prepared by catalytic CVD with high deposition rate

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 143 - 146 2000

Influence of a-Si : H deposition by catalytic CVD on transparent conducting oxides

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 147 - 150 2000

Formation of silicon films for solar cells by Cat-CVD method

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 163 - 166 2000

Fabrication of amorphous carbon nitride films by hot wire chemical vapor deposition

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 205 - 208 2000

Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH4

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 41 - 44 2000

Photoinduced volume change in a-Si : H films prepared by Cat-CVD method

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 69 - 72 2000

Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly-Si

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 85 - 88 2000

Guiding principles for obtaining device-grade hydrogenated amorphous silicon films by catalytic chemical vapor deposition

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 99 - 102 2000

Effect of atomic H and chamber cleaning in catalytic CVD on reproducibility of a-Si : H film properties

Digest of Technical Papers 2000 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials- 219 - 222 2000

Study on Cat-CVD Si3N4 films and its application to ULSI process

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 241 - 244 2000

Low-k silicon nitride film for copper interconnects process prepared by Cat-CVD method at low temperature

Extended Abstract of the 1st International Conference on Cat-CVD(Hot-Wire CVD)Process 245 - 248 2000

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